Measuring low doping level and short carrier lifetime in indium arsenide with a contactless terahertz technique at room temperature
Non-destructive, reliable, and accurate measurements of low doping levels and carrier
lifetimes in small direct-bandgap semiconductors such as indium arsenide (InAs) at room …
lifetimes in small direct-bandgap semiconductors such as indium arsenide (InAs) at room …
New doping method to obtain n-type silicon ribbons
A method to dope silicon ribbons is presented. The method consists on the spraying of the
ribbons with a phosphoric acid solution followed by a recrystallization in an optical heating …
ribbons with a phosphoric acid solution followed by a recrystallization in an optical heating …
Transparent Indium Tin Oxide Microelectrode Arrays for Measuring Beating Cardiomyocytes
H Iftikhar - 2016 - trepo.tuni.fi
This thesis study was made, to develop the microfabrication process for transparent
microelectrode arrays (MEAs) using indium tin oxide (ITO). This was done in order to …
microelectrode arrays (MEAs) using indium tin oxide (ITO). This was done in order to …
Thermoelectric Material Property Measurement for Flexible Films
C Hollar - 2016 - scholarworks.boisestate.edu
The market for wearable electronics and implantable medical devices continues to grow.
Within the next several years, the wearable electronic and implantable medical devices …
Within the next several years, the wearable electronic and implantable medical devices …
[PDF][PDF] SPRAYED PHOSPHORIC ACID AS DOPANT SOURCE FOR N-TYPE SILICON RIBBONS
A new method to dope silicon ribbons with phosphorous is presented. The method is based
on the spraying of the samples with a phosphoric acid (H3PO4) solution and a …
on the spraying of the samples with a phosphoric acid (H3PO4) solution and a …