A review of direct drive proportional electrohydraulic spool valves: industrial state-of-the-art and research advancements
P Tamburrano, AR Plummer… - Journal of …, 2019 - asmedigitalcollection.asme.org
This paper reviews the state of the art of directly driven proportional directional hydraulic
spool valves, which are widely used hydraulic components in the industrial and …
spool valves, which are widely used hydraulic components in the industrial and …
Thermal management and characterization of high-power wide-bandgap semiconductor electronic and photonic devices in automotive applications
GaN-based high-power wide-bandgap semiconductor electronics and photonics have been
considered as promising candidates to replace conventional devices for automotive …
considered as promising candidates to replace conventional devices for automotive …
Device-level thermal management of gallium oxide field-effect transistors
B Chatterjee, K Zeng, CD Nordquist… - IEEE Transactions …, 2019 - ieeexplore.ieee.org
The ultrawide bandgap (UWBG)(~ 4.8 eV) and melt-grown substrate availability of β-Ga 2 O
3 give promise to the development of next-generation power electronic devices with …
3 give promise to the development of next-generation power electronic devices with …
High-resolution thermoreflectance imaging investigation of self-heating in AlGaN/GaN HEMTs on Si, SiC, and diamond substrates
A El Helou, P Komarov, MJ Tadjer… - … on Electron Devices, 2020 - ieeexplore.ieee.org
Gallium nitride (GaN) high electron-mobility transistors (HEMTs) offer considerable high-
power operation but suffer in reliability due to potentially damaging self-heating. In this …
power operation but suffer in reliability due to potentially damaging self-heating. In this …
Experimental characterization of the thermal time constants of GaN HEMTs via micro-Raman thermometry
Gallium nitride (GaN) high-electron mobility transistors (HEMTs) are a key technology for
realizing next generation high-power RF amplifiers and high-efficiency power converters …
realizing next generation high-power RF amplifiers and high-efficiency power converters …
Transient thermal characterization of AlGaN/GaN HEMTs under pulsed biasing
G Pavlidis, D Kendig, ER Heller… - IEEE Transactions on …, 2018 - ieeexplore.ieee.org
The development of steady-state thermal characterization techniques for AlGaN/GaN high-
electron mobility transistors (HEMTs) has been used to measure the device's peak …
electron mobility transistors (HEMTs) has been used to measure the device's peak …
Characterization of AlGaN/GaN HEMTs using gate resistance thermometry
In this paper, gate resistance thermometry (GRT) was used to determine the channel
temperature of AlGaN/GaN high electron-mobility transistors. Raman thermometry has been …
temperature of AlGaN/GaN high electron-mobility transistors. Raman thermometry has been …
Theory of thermal time constants in GaN high-electron-mobility transistors
KR Bagnall, EN Wang - IEEE Transactions on Components …, 2017 - ieeexplore.ieee.org
Due to the high dissipated power densities present in GaN high-electron-mobility transistors
(HEMTs) in high-power radio frequency applications, thermal analysis and thermal …
(HEMTs) in high-power radio frequency applications, thermal analysis and thermal …
A drain–source connection technique: Thermal resistance measurement method for GaN HEMTs using TSEP at high voltage
In the article, a new thermal resistance measurement method for GaN high electron mobility
transistor (HEMTs) is proposed based on temperature sensitive electrical parameter (TSEP) …
transistor (HEMTs) is proposed based on temperature sensitive electrical parameter (TSEP) …
Device-level multidimensional thermal dynamics with implications for current and future wide bandgap electronics
Researchers have been extensively studying wide-bandgap (WBG) semiconductor
materials such as gallium nitride (GaN) with an aim to accomplish an improvement in size …
materials such as gallium nitride (GaN) with an aim to accomplish an improvement in size …