Neuromorphic computation based on resistive switching devices represents a relevant
hardware alternative for artificial deep neural networks. For the highest accuracies on …

Artificial intelligences are promising in future societies, and neural networks are typical
technologies with the advantages such as self-organization, self-learning, parallel …

With the rapid development of information technology for big data, memristors have become
more and more popular nanoscale devices for storing a large amount of information and …

We report the fabrication and characterization of indium gallium zinc oxide (IGZO)-based
synaptic thin-film transistors. Radio-frequency magnetron-sputtered AlO x thin films are …

An amorphous-metal-oxide-semiconductor (AOS) thin-film planar-type spike-timing-
dependent-plasticity (STDP) synapse device has been developed. The AOS is a non-rare …

Atomically thin oxide semiconductors are emerging as potential materials for their
potentiality in monolithic 3D integration and sensor applications. In this study, a charge …

A Ga-Sn-O (GTO) thin-film memristor has been developed, and an analog plasticity
characteristic has been observed. First, GTO thin-film memristors are fabricated by …

In this article, characterization of fully patterned zinc-tin oxide (ZTO)-based memristive
devices with feature sizes as small as 25 µm2 is presented. The devices are patterned via lift …

The interference of noise will cause the degradation of image quality, which can have a
negative impact on the subsequent image processing and visual effect. Although the …

We provide a quantitative analysis on the charge-retention characteristics of sub-threshold
operating In–Ga–Zn–O (IGZO) thin-film transistors (TFTs) with a defective gate-oxide for low …