Al 2 O 3 thin films were grown on highly-doped p-Si (100) macro-and mesoporous structures
by atomic layer deposition (ALD) using trimethylaluminum (TMA) and water H 2 O as …

Excellent surface passivation of c-Si has been achieved by Al 2 O 3 films prepared by
plasma-assisted atomic layer deposition, yielding effective surface recombination velocities …

HfO2 thin films, extensively studied as high-k gate dielectric layers in metal-oxide-
semiconductor field effect transistors, have attracted interest of late due to their newly …

The paper reviews recent work in the area of high-k dielectrics for application as the gate
oxide in advanced MOSFETs. Following a review of relevant dielectric physics, we discuss …

We report on results on the preparation of thin (< 100 nm) aluminum oxide (Al 2 O 3) films on
silicon substrates using thermal atomic layer deposition (T-ALD) and plasma enhanced …

HfO 2 gate dielectric thin-films were deposited on Si wafers using an atomic-layer deposition
(ALD) technique with HfCl 4 and either H 2 O or O 3 as the precursor and oxidant …

Metal-oxide-semiconductor capacitors incorporating Hf O 2 dielectrics were fabricated and
investigated. In this work, the structural and electrical characterizations were performed at …

Uniform Al2O3 films were deposited on silicon substrates by the sol–gel process from stable
coating solutions. The technological procedure includes spin coating deposition and …

X-ray photoelectron spectroscopy (XPS) combined with first principles simulations are used
to investigate the band alignments of HfO 2 on silicon. Our theoretical calculations predict …

The impact of states at the Al 2 O 3/Si interface on the capacitance-voltage CV
characteristics of a metal/insulator/semiconductor heterostructure (MIS) capacitor was …