Phase-change memory (PCM) is an emerging non-volatile memory technology that has
recently been commercialized as storage-class memory in a computer system. PCM is also …

We survey progress in the PCM field over the past five years, ranging from large-scale PCM
demonstrations to materials improvements for high–temperature retention and faster …

In this paper, GaGST films with different Ga contents were prepared by co-sputtering of Ge
3.4 Sb 2.3 Te 5 target and Ga 2 Ge 3.8 Sb 2.3 Te 5 target to obtain a high-speed and low …

The implementation of artificial spiking neural network (SNN) usually takes advantage of
multiple heterogeneous circuits to mimic either neurons which generate spiking pulses, or …

Attempts to improve the retention so far must sacrifice switching speed. This work explores
new phase change material based on pseudobinary GaSb-Ge system. The resulting new …

Abstract Phase‐change memory (PCM), using the fast and reversible transition between
crystal and glass to store binary data, is a promising candidate for next‐generation …

In order to optimize materials for phase change random access memories (PCRAM), the
effect of Ge doping on Ga-Sb alloy crystallization was studied using combined in situ …

Ge2Sb2Te4Se (I) and Ge2Sb2Te2Se3 (II) thin films were synthesized and compared to the
pure telluride Ge2Sb2Te5. In situ X-ray diffraction (XRD) and in situ transmission electron …

In this work, we investigated the structural and conductivity stability of Ga–Sb thin films for
phase change memory (PCM). The mass density and thickness change are significant for …

Among phase change materials, Ge-rich GeSbTe alloys (GGST) are key alloys for the next
generation of embedded phase change memories because of their good thermal stability …