Enhanced robustness against hot-electron-induced degradation in active-passivation p-GaN gate HEMT
J Yang, J Wei, Y Wu, J Yu, J Cui, X Yang, X Liu… - Applied Physics …, 2024 - pubs.aip.org
The hot-electron-related reliability is an important issue for GaN power devices under harsh
operation condition or environment. These high-energy electrons can scatter toward the …
operation condition or environment. These high-energy electrons can scatter toward the …
Hole transport mechanism at high temperatures in p-GaN/AlGaN/GaN heterostructure
This Letter reports an investigation of hole transport in p-GaN/AlGaN/GaN heterostructures
through experimental and theoretical analyses under varied conditions. Highly non-linear …
through experimental and theoretical analyses under varied conditions. Highly non-linear …
p-GaN Platform for Next-Generation GaNComplementary Transistors and Circuits
Q Xie - 2024 - dspace.mit.edu
Gallium nitride (GaN) integrated circuits (ICs) are receiving increasing attention because
they offer compactness, reduced parasitics, and higher performance compared to discrete …
they offer compactness, reduced parasitics, and higher performance compared to discrete …
Comparative Analysis of Ni/Ag and Ni/Au Contacts on GaN/AlGaN/GaN Platform
Y Zhang, X Zhang, Z Sun, W Wang, M Ling… - … status solidi (a), 2024 - Wiley Online Library
Herein, the electrical characteristics and Schottky barrier of Ni/Au and Ni/Ag contacts on the
GaN/AlGaN/GaN heterojunction are investigated. Both contacts on the p‐GaN contact layer …
GaN/AlGaN/GaN heterojunction are investigated. Both contacts on the p‐GaN contact layer …
Formation of High-Quality Ni/Agcontacts on P-Gan/Algan/Gan Platform
Z Sun, W Wang, Y Zhang, M Ling, T Zhao, Y Wu… - Agcontacts on P-Gan … - papers.ssrn.com
This study systematically investigated Ni/Ag contacts for moderately doped p-
GaN/AlGaN/GaN heterostructure, including contact optimization, the conduction formation …
GaN/AlGaN/GaN heterostructure, including contact optimization, the conduction formation …