A time-interleaved digital-to-analog converter up to 118 GS/s with integrated analog multiplexer in 28-nm FD-SOI CMOS technology
D Widmann, T Tannert, XQ Du, T Veigel… - IEEE Journal of Solid …, 2023 - ieeexplore.ieee.org
To enhance sampling rates of CMOS digital-to-analog converters (DACs), analog
multiplexing of several DAC output signals in the time domain provides a solution. In this …
multiplexing of several DAC output signals in the time domain provides a solution. In this …
A 20–42-GHz IQ receiver in 22-nm CMOS FD-SOI with 2.7–4.2-dB NF and− 25-dBm IP1dB for wideband 5G systems
This article presents a 20–42-GHz in-phase and quadrature (IQ) receiver in 22-nm CMOS
fully depleted silicon on insulator (FD-SOI). The receiver includes a wideband low noise …
fully depleted silicon on insulator (FD-SOI). The receiver includes a wideband low noise …
Multiband LNAs for software-defined radios: recent advances in the design of multiband reconfigurable LNAs for SDRs in CMOS, microwave integrated circuits …
The last decade has witnessed an increasing number of wireless standards for civil, military,
and space communications. Along with the advances in integrated circuit (IC) technologies …
and space communications. Along with the advances in integrated circuit (IC) technologies …
Ultrawideband LNA 1960–2019
S Shahrabadi - IET Circuits, Devices & Systems, 2021 - Wiley Online Library
To the best of the author's knowledge, several studies during 1960–2019 were carried out
on wideband and ultrawideband LNAs just to render optimum LNAs for SAW‐less Radio …
on wideband and ultrawideband LNAs just to render optimum LNAs for SAW‐less Radio …
Design of 1.2-V broadband high data-rate MMW CMOS I/Q modulator and demodulator using modified Gilbert-cell mixer
JH Tsai - IEEE Transactions on Microwave Theory and …, 2011 - ieeexplore.ieee.org
In this paper, low-voltage evolution and high-speed operation mixer design are presented
for millimeter-wave (MMW) CMOS in-phase/quadrature (I/Q) modulator and demodulator …
for millimeter-wave (MMW) CMOS in-phase/quadrature (I/Q) modulator and demodulator …
120-GHz wideband I/Q receiver based on baseband equalizing technique
In this study, we examined a 120-GHz wideband I/Q receiver based on a baseband
equalizing amplifier using 40-nm complementary metal oxide semiconductor (CMOS) …
equalizing amplifier using 40-nm complementary metal oxide semiconductor (CMOS) …
A centimeter resolution, 10 m range CMOS impulse radio radar for human motion monitoring
P Park, S Kim, S Woo, C Kim - IEEE Journal of Solid-State …, 2014 - ieeexplore.ieee.org
A single-chip impulse radio radar transceiver that enables high-resolution reception with
enhanced signal to noise ratio (SNR) is proposed. The radar transceiver, consisting of a …
enhanced signal to noise ratio (SNR) is proposed. The radar transceiver, consisting of a …
3–10 GHz self‐biased resistive‐feedback LNA with inductive source degeneration
C Feng, XP Yu, ZH Lu, WM Lim, WQ Sui - Electronics letters, 2013 - Wiley Online Library
A 3–10 GHz self‐biased low‐noise amplifier (LNA) implemented in Global Foundries 65 nm
CMOS process is presented. A novel input‐matching network employing the resistive …
CMOS process is presented. A novel input‐matching network employing the resistive …
A compact 2.1–39 GHz self-biased low-noise amplifier in 65 nm CMOS technology
A compact self-biased wideband low noise amplifier (LNA) is realized in Global Foundries
65 nm CMOS technology. Wideband input matching characteristic is achieved by placing a …
65 nm CMOS technology. Wideband input matching characteristic is achieved by placing a …
Design of the CMOS inverter‐based amplifier: A quantitative approach
SM Sharroush - International Journal of Circuit Theory and …, 2019 - Wiley Online Library
The CMOS inverter can be used as an amplifier if properly biased in the transition region of
its voltage‐transfer characteristics (VTC). In this paper, the design of this amplifier is …
its voltage‐transfer characteristics (VTC). In this paper, the design of this amplifier is …