In this review, the application of light ion irradiation is discussed for tailoring novel functional
materials and for improving the performance in SiC or Si based electrical power devices …

Electrical properties of silicon diodes with p+ n junctions irradiated with 197Au+ 26 swift
heavy ions (energy E= 350MeV, fluences of 107cm− 2 and 108cm− 2) and silicon diodes …

Characteristics of Si p+ n diodes with non-uniformly distributed compensating defects, which
were introduced by implantation with Xe23+ ions, have been studied. The layer with the …

Silicon diodes with pn-junction irradiated with high-energy krypton ions (energy 250MeV,
fluences from 108 to 109cm-2) were studied, along with diodes irradiated with electrons …

The enhanced thermal donor (TD) formation was investigated in the float-zone n-type silicon
irradiated with 7MeV helium ions at fluences from 5× 109 to 1× 1012cm− 2 and …

The diodes manufactured on the wafers of single-crystalline silicon uniformly doped with
phosphorus are studied. The wafer resistivity was 90 Ω cm. Krypton ions are implanted to the …

Cross-sectional cathodoluminescence (CL) measurements were applied to the study of
electron-irradiated punch-through insulated gate bipolar transistors (IGBTs) to investigate …

Long turn-off time limits high frequency operation of Bipolar Junction Transistors (BJTs).
Turn-off time decreases with increases in the recombination rate of minority carriers at …

Silicon p–i–n diodes have attracted considerable attention for their use as many
applications. In the light of reducing total power loss, the forward voltage V f and the reverse …

Background When bipolar junction transistors (BJTs) are used as switches, their switching
characteristics can be deteriorated because the recombination time of the minority carriers is …