The development of the HgCdTe alloy as the most important intrinsic semiconductor for
infrared (IR) technology is well established and recognized. In spite of the achievements in …

Infrared Detectors provides comprehensive coverage of this important aspect of infrared
technology, including details of recent research efforts directed toward improving the …

Hitherto, two distinct families of multielement detector arrays have been used for infrared (IR)
imaging system applications: linear arrays for scanning systems (first generation) and two …

This new edition of Infrared and Terahertz Detectors provides a comprehensive overview of
infrared and terahertz detector technology, from fundamental science to materials and …

The InAs/InAsSb (Gallium-free) type-II strained-layer superlattice (T2SLS) has emerged in
the last decade as a viable infrared detector material with a continuously adjustable band …

In the paper, fundamental and technological issues associated with the development and
exploitation of the most advanced infrared detector technologies are discussed. In this class …

Advances in bulk III-V semiconductor material such as InGaAsSb and metamorphic InAsSb,
as well as in a variety of type-II superlattices such as InGaAs/GaAsSb, InAs/GaSb, and …

Third-generation infrared (IR) systems are being developed nowadays. In the common
understanding, these systems provide enhanced capabilities-like larger numbers of pixels …

Abstract The InAs/GaSb family of type II superlattices (T2SL) is the only known infrared (IR)
detector material having a theoretically predicted higher performance than HgCdTe. The …

Publisher Summary This chapter provides an overview of type-II superlattice infrared
detectors. The type-II InAs/GaSb superlattices have several fundamental properties that …