Near infrared (NIR) luminescent materials are an exciting playground for
telecommunications, biosciences and solar energy conversion. In particular, transition metal …

Si-based group III-V material enables a multitude of applications and functionalities of the
novel optoelectronic integration chips (OEICs) owing to their excellent optoelectronic …

Monolithic integration of III-V semiconductor devices on Silicon (Si) has long been of great
interest in photonic integrated circuits (PICs), as well as traditional integrated circuits (ICs) …

Heteroepitaxy of III–V compound semiconductors on industry standard (001) silicon (Si)
substrates is highly desirable for large-scale electronic and photonic integrated circuits …

Heteroepitaxy of indium phosphide (InP) and its lattice-matched alloys on silicon (Si) show
great promise for Si-based optoelectronic devices and photonic integrated circuits. Here, we …

We report the development of gallium arsenide (GaAs) films grown on V-groove patterned
(001) silicon (Si) by metalorganic chemical vapor deposition. This technique can provide an …

We have developed InP-based 1.55-μm lasers epitaxially grown on (001) Si substrates for
photonics integration. To overcome the fundamental material challenges associated with …

Practical applications of low-defect III–V materials grown on Si require large areas for
patterning metal contacts and enhancing design flexibility. Here, we report selective area …

Featured Application optical communication, silicon photonics. Abstract Direct epitaxial
growth of III-V heterostructure on CMOS-compatible silicon wafer offers substantial …

Heteroepitaxy of III–V compound semiconductors on silicon (Si) or silicon-on-insulator (SOI)
substrates is of great interest for photonics and electronics applications. In this work …