GaN and related III-nitrides have attracted considerable attention as promising materials for
application in optoelectronic devices, in particular, light-emitting diodes (LEDs). At present …

The use of III-nitride-based light-emitting diodes (LEDs) is now widespread in applications
such as indicator lamps, display panels, backlighting for liquid-crystal display TVs and …

Group III-nitride material system possesses some unique properties, such as large spectrum
coverage from infrared to deep ultraviolet, wide energy band gap, high electron saturation …

To improve the growth rate and crystal quality of AlN, the competitive growth mechanisms of
AlN under different parameters were studied. The mass transport limited mechanism was …

This work represents a cost and time effective approach for pattern design of patterned
sapphire substrates (PSS) for highly efficient GaN-based light emitting diodes (LEDs) …

Temperature-dependent electroluminescence from InGaN/GaN light-emitting diodes (LEDs)
grown on Si (111) are investigated. With the increase of current density, internal quantum …

We have measured and analyzed the carrier-density dependence of photoluminescence
(PL) spectra and the PL efficiency of InGaN/GaN multiple quantum wells in nanocolumns …

Photo-enhanced chemical (PEC) etch of wurtzite aluminum nitride (AlN) was investigated to
overcome its low etch rate. Epitaxial AlN grown on Al 2 O 3 substrate by metal-organic …

The use of large size Si substrates for epitaxy of nitride light emitting diode (LED) structures
has attracted great interest because Si wafers are readily available in large diameter at low …

The growth techniques which have enabled the realization of InGaN‐based multi‐quantum‐
well (MQW) structures with high internal quantum efficiencies (IQE) on 150 mm (6‐in.) silicon …