This letter presents a novel type of epitaxial gallium nitride (GaN) on semi-insulating silicon
carbide (4H-SiC)-based high-overtone bulk acoustic resonators (HBARs) that eliminates the …

Amplification of surface acoustic waves (SAWs) by electron drift in a two-dimensional
electron gas (2DEG) is analyzed analytically and confirmed experimentally. Calculations …

(1. 华中科技大学光学与电子信息学院, 湖北武汉430074; 2. 深圳华中科技大学研究院,
广东深圳518063) 摘要: 基于声电放大效应的声表面波滤波器具有高集成度, 非互异性等优势 …

This work examines the performance and fundamental operating principles of an active
acoustic emitter based on an AlGaN/GaN high electron mobility transistor (HEMT). Strong …

Two experimental techniques for measuring dynamic displacement and strain for in-plane
bulk acoustic resonators are presented. These techniques, optical knife-edge and …

Light and sound have always been the main tools of mankind to perceive nature and to
communicate with each other. Classical optical devices based on refractive lenses like …

This paper reports the first use of dynamic photoelastic imaging for identifying in-plane
vibration modes in high-frequency MEMS resonators. In a set of width-extensional mode …

In this work, amplification of surface acoustic waves (SAWs) by electron drift in a nanometer-
scale two-dimensional electron gas (2DEG) is analyzed analytically. We compare the …

This paper highlights development efforts in the use of AlGaN/GaN heterostructures for
launching, receiving and amplifying surface acoustic waves. High-electron mobility …