In this paper, a new junctionless optical controlled field effect transistor (JL-OCFET) and its comprehensive theoretical model is proposed to achieve high optical performance and low …
K Tamersit - IEEE Sensors Journal, 2023 - ieeexplore.ieee.org
In this article, a new asymmetric dual-gate junctionless graphene nanoribbon tunneling field- effect phototransistor (DG JL-GNRTFEP) has been proposed using a quantum simulation …
M Khurana, U Kardam, M Saxena… - IETE Technical …, 2023 - Taylor & Francis
In this article, a semi-analytical model for germanium absorber-based SOI-tunnel field-effect phototransistor at 1550 nm has been proposed. The model works efficiently for a wide range …
In this work, TCAD-based investigation of junctionLess (JL) architecture having double gate (DG) has been performed for visualizing the sensitivity of the device against light intensity …
In this paper, a new TiO 2-based UV photodetector including back triangular texturization morphology has been investigated numerically using accurate solutions of Maxwell's …
F Djeffal, H Ferhati - Journal of Computational electronics, 2016 - Springer
In this paper, we propose a new optically controlled field effect transistor, OC-FET, based on both surface texturization and graded gate doping engineering. The proposed design …
An ultraviolet photodetector based on zinc oxide nanowire field effect transistor is designed and simulated in three configurations including single nanowire, three parallel and array of …
This paper deals with an accurate experimental investigation of the optical sensing behavior of a microwave low-noise amplifier (LNA). The tested amplifier, employing a commercial …
H Ferhati, F Djeffal - Journal of Computational Electronics, 2016 - Springer
In this paper, an optimized ultra-low power phototransistor design based on gradual gate doping engineering is proposed. Using an analytical investigation and numerical simulation …