Metalorganic chemical vapor deposition of InN quantum dots and nanostructures
Using one material system from the near infrared into the ultraviolet is an attractive goal, and
may be achieved with (In, Al, Ga) N. This III-N material system, famous for enabling blue and …
may be achieved with (In, Al, Ga) N. This III-N material system, famous for enabling blue and …
Bandgap energy bowing parameter of strained and relaxed InGaN layers
G Orsal, Y El Gmili, N Fressengeas, J Streque… - Optical Materials …, 2014 - opg.optica.org
This paper focuses on the determination of the bandgap energy bowing parameter of
strained and relaxed InxGa_1− xN layers. Samples are grown by metal organic vapor phase …
strained and relaxed InxGa_1− xN layers. Samples are grown by metal organic vapor phase …
Experimental Study and Device Design of NO, NO2, and NH3 Gas Detection for a Wide Dynamic and Large Temperature Range Using Pt/AlGaN/GaN HEMT
C Bishop, Y Halfaya, A Soltani… - IEEE Sensors …, 2016 - ieeexplore.ieee.org
We report an AlGaN/GaN HEMT gas sensor designed to enable NO, NO 2, and NH 3
detection from 100° C-400° C over a large concentration range. Device modeling is …
detection from 100° C-400° C over a large concentration range. Device modeling is …
Semibulk InGaN: A novel approach for thick, single phase, epitaxial InGaN layers grown by MOVPE
In this paper we demonstrate a solution to systematically obtain thick, single phase InGaN
epilayers by MOVPE. The solution consists in periodically inserting ultra-thin GaN interlayers …
epilayers by MOVPE. The solution consists in periodically inserting ultra-thin GaN interlayers …
Bandgap bowing in BGaN thin films
We report on the bandgap variation in thin films of B x Ga 1− x N grown on AlN/sapphire
substrates using metal-organic vapor phase epitaxy. Optical transmission …
substrates using metal-organic vapor phase epitaxy. Optical transmission …
Multilayered InGaN/GaN structure vs. single InGaN layer for solar cell applications: A comparative study
Y El Gmili, G Orsal, K Pantzas, T Moudakir… - Acta Materialia, 2013 - Elsevier
We report a comparison of the morphological, structural and optical properties of both InGaN
single-layer and multilayered structures, the latter consisting of periodic thin GaN interlayers …
single-layer and multilayered structures, the latter consisting of periodic thin GaN interlayers …
Distributed Bragg reflectors based on diluted boron-based BAlN alloys for deep ultraviolet optoelectronic applications
M Abid, T Moudakir, G Orsal, S Gautier… - Applied Physics …, 2012 - pubs.aip.org
Highly reflective deep UV distributed Bragg reflectors (DBRs) based on the BAlN material
system have been grown by metalorganic vapour phase epitaxy on AlN template substrates …
system have been grown by metalorganic vapour phase epitaxy on AlN template substrates …
BAlN thin layers for deep UV applications
X Li, S Sundaram, YE Gmili, T Moudakir… - … status solidi (a), 2015 - Wiley Online Library
In this work, wurtzite BAlN layers with boron composition as high as 12% were successfully
grown by MOVPE. The growth was performed at 650° C and then annealed at 1020° C. Low …
grown by MOVPE. The growth was performed at 650° C and then annealed at 1020° C. Low …
MOVPE grown periodic AlN/BAlN heterostructure with high boron content
X Li, S Sundaram, Y El Gmili, F Genty… - Journal of Crystal …, 2015 - Elsevier
Abstract Five-period AlN/BAlN heterostructure containing boron as high as 11% has been
successfully grown by MOVPE. Good periodicity of two alternative layers has been observed …
successfully grown by MOVPE. Good periodicity of two alternative layers has been observed …
AlGaN-based MQWs grown on a thick relaxed AlGaN buffer on AlN templates emitting at 285 nm
X Li, S Sundaram, P Disseix, G Le Gac… - Optical Materials …, 2015 - opg.optica.org
We report on the growth of Al_0. 57Ga_0. 43N/Al_0. 38Ga_0. 63N MQWs grown on a
relaxed Al_0. 58Ga_0. 42N buffer on AlN template by Metal Organic Vapor Phase Epitaxy …
relaxed Al_0. 58Ga_0. 42N buffer on AlN template by Metal Organic Vapor Phase Epitaxy …