MoS2 Field-Effect Transistor with Sub-10 nm Channel Length
Atomically thin molybdenum disulfide (MoS2) is an ideal semiconductor material for field-
effect transistors (FETs) with sub-10 nm channel lengths. The high effective mass and large …
effect transistors (FETs) with sub-10 nm channel lengths. The high effective mass and large …
[HTML][HTML] S2DS: Physics-based compact model for circuit simulation of two-dimensional semiconductor devices including non-idealities
SV Suryavanshi, E Pop - Journal of Applied Physics, 2016 - pubs.aip.org
We present a physics-based compact model for two-dimensional (2D) field-effect transistors
(FETs) based on monolayer semiconductors such as MoS 2. A semi-classical transport …
(FETs) based on monolayer semiconductors such as MoS 2. A semi-classical transport …
An improved virtual-source-based transport model for quasi-ballistic transistors—Part I: Capturing effects of carrier degeneracy, drain-bias dependence of gate …
S Rakheja, MS Lundstrom… - IEEE Transactions on …, 2015 - ieeexplore.ieee.org
In this paper, an improved physics-based virtual-source (VS) model to describe transport in
quasi-ballistic transistors is discussed. The model is based on the Landauer scattering …
quasi-ballistic transistors is discussed. The model is based on the Landauer scattering …
A new pressure microsensor based on dual-gate graphene field-effect transistor with a vertically movable top-gate: Proposal, analysis, and optimization
The combination of modern electronic devices and nanoelectromechanical systems (NEMS)
has given new impulses to the development of sensors and biosensors. A new pressure …
has given new impulses to the development of sensors and biosensors. A new pressure …
A physics-based compact model for ultrathin black phosphorus FETs—Part I: Effect of contacts, temperature, ambipolarity, and traps
E Yarmoghaddam, N Haratipour… - … on Electron Devices, 2019 - ieeexplore.ieee.org
We report a physics-based surface-potential compact model to describe current-voltage (IV)
relationship in a few-layered ambipolar black phosphorus (BP) transistors. To model the …
relationship in a few-layered ambipolar black phosphorus (BP) transistors. To model the …
Large-signal model of 2DFETs: Compact modeling of terminal charges and intrinsic capacitances
We present a physics-based circuit-compatible model for double-gated two-dimensional
semiconductor-based field-effect transistors, which provides explicit expressions for the …
semiconductor-based field-effect transistors, which provides explicit expressions for the …
A large-signal monolayer graphene field-effect transistor compact model for RF-circuit applications
JD Aguirre-Morales, S Frégonèse… - … on Electron Devices, 2017 - ieeexplore.ieee.org
In this paper, we report a physics-based compact model for monolayer graphene field-effect
transistors (m-GFETs) based on the 2-D Density of States of monolayer graphene and the …
transistors (m-GFETs) based on the 2-D Density of States of monolayer graphene and the …
Design and circuit modeling of graphene plasmonic nanoantennas
S Rakheja, P Sengupta, SM Shakiah - IEEE Access, 2020 - ieeexplore.ieee.org
Nanonntennas are critical elements of nanoscale wireless communication technologies with
potential to overcome some of the limitations of on-chip interconnects. In this paper, we …
potential to overcome some of the limitations of on-chip interconnects. In this paper, we …
Ring oscillators based on monolayer Graphene FET
A ring oscillator is an important circuit used to evaluate the performance limits of any digital
technology. The advantages of Graphene field effect transistor (GFET) over current CMOS …
technology. The advantages of Graphene field effect transistor (GFET) over current CMOS …
Physics-based modeling and validation of 2-D Schottky barrier field-effect transistors
In this work, we describe the charge transport in 2-D Schottky barrier field-effect transistors
(SB-FETs) based on the carrier injection at the Schottky contacts. We first develop a …
(SB-FETs) based on the carrier injection at the Schottky contacts. We first develop a …