This study presents a gate-all-around InAs–Si vertical tunnel field-effect transistor with a
triple metal gate (VTG-TFET). We obtained improved switching characteristics for the …

In this paper, the undoped vertical dual-bilayer tunnel field effect transistor (UV-DBL-TFET)
at a low operating voltage (0.5 V) is introduced, and its DC and RF performance parameters …

The drain current improvement in a Negative Capacitance Double Gate Tunnel Field Effect
Transistor (NC-DG TFET) with the help of Heterojunction (HJ) at the source-channel region …

In this work, a new Hetero-Stacked Source Dual Metal T-shaped Gate Silicon-on-Insulator
(SOI) TFET (HS-DMTG-TFET) is proposed, exhibiting significantly improved DC …

It is well known that the vertical tunnel field effect transistor (TFET) is easier to fabricate than
the conventional lateral TFETs in technology. Meanwhile, a lightly doped pocket under the …

This article highlights the results of a source pocket-engineered heterojunction pure-boron
SOI Tunnel-FET (SP-PB-TFET) for low-power applications. To achieve improved …

In this paper, we introduce a novel III–V compound material-based junction-free (JF) L-
shaped gate normal line tunneling field-effect transistor (III–V JF L GNLTFET) for improved …

In this paper, an In0. 53Ga0. 47As electron–hole bilayer tunnel field-effect transistor
(EHBTFET) with a dual-metal left-gate and an N+-pocket (DGNP-EHBTFET) is proposed and …

In this paper, a symmetric heterogate dopingless electron–hole bilayer tunnel field-effect
transistor with a ferroelectric layer and a dielectric barrier layer (FBHD-EHBTFET) is …

In this paper, Triple Metal Gate technique based Vertical Nanowire TFET (TMG-VNWTFET)
is proposed and its performance characteristics are analyzed. The proposed device is …