A review of resistive switching devices: performance improvement, characterization, and applications
As human society enters the big data era, huge data storage and energy‐efficient data
processing are in great demand. The resistive switching device is an emerging device with …
processing are in great demand. The resistive switching device is an emerging device with …
Nanoionic memristive phenomena in metal oxides: the valence change mechanism
This review addresses resistive switching devices operating according to the bipolar
valence change mechanism (VCM), which has become a major trend in electronic materials …
valence change mechanism (VCM), which has become a major trend in electronic materials …
Resistive Switching Mechanisms on TaOx and SrRuO3 Thin-Film Surfaces Probed by Scanning Tunneling Microscopy
The local electronic properties of tantalum oxide (TaO x, 2≤ x≤ 2.5) and strontium
ruthenate (SrRuO3) thin-film surfaces were studied under the influence of electric fields …
ruthenate (SrRuO3) thin-film surfaces were studied under the influence of electric fields …
Resistive switching properties in memristors for optoelectronic synaptic memristors: deposition techniques, key performance parameters, and applications
R Khan, NU Rehman, S Iqbal, S Abdullaev… - ACS Applied …, 2023 - ACS Publications
Due to the fast evolution of information technology, high-speed and scalable memory
devices are being investigated for data storage and data-driven computation. Resistive …
devices are being investigated for data storage and data-driven computation. Resistive …
[HTML][HTML] Energy-band alignments at ZnO/Ga2O3 and Ta2O5/Ga2O3 heterointerfaces by X-ray photoelectron spectroscopy and electron affinity rule
Wide bandgap oxide semiconductors have been a hot topic in electronic and optoelectronic
technologies. The oxide heterojunctions provide many significant favorable properties in …
technologies. The oxide heterojunctions provide many significant favorable properties in …
Real-Time Observation of the Electrode-Size-Dependent Evolution Dynamics of the Conducting Filaments in a SiO2 Layer
Conducting bridge random access memory (CBRAM) is one of the most promising
candidates for future nonvolatile memories. It is important to understand the scalability and …
candidates for future nonvolatile memories. It is important to understand the scalability and …
Liquid–Liquid Interface-Assisted Self-Assembly of Ag-Doped ZnO Nanosheets for Atomic Switch Application
Developing facile and inexpensive methods for obtaining large-area two-dimensional
semiconducting nanosheets is highly desirable for mass-scale device application. Here, we …
semiconducting nanosheets is highly desirable for mass-scale device application. Here, we …
SiO 2/Ta 2 O 5 heterojunction ECM memristors: physical nature of their low voltage operation with high stability and uniformity
X Guo, Q Wang, X Lv, H Yang, K Sun, D Yang, H Zhang… - Nanoscale, 2020 - pubs.rsc.org
Non-uniformity of switching parameters, eg, switching voltage and resistances of the high
resistance state and low resistance state, could obstruct the practical application of …
resistance state and low resistance state, could obstruct the practical application of …
Visualizing the Local Composition Changes during Resistive Switching in Planar TaOx-ReRAMs
Y Naitoh, H Shima, H Akinaga - ACS Applied Electronic Materials, 2023 - ACS Publications
Resistive random-access memory (ReRAM) is an attractive concept for the advancement of
computing capabilities. TaO x-ReRAMs are among the best candidate devices for resistive …
computing capabilities. TaO x-ReRAMs are among the best candidate devices for resistive …
Identification and roles of nonstoichiometric oxygen in amorphous Ta2O5 thin films deposited by electron beam and sputtering processes
The morphology and composition of tantalum oxide (Ta 2 O 5) thin films prepared by
electron-beam (EB) evaporation and radio-frequency sputtering (SP) were investigated by …
electron-beam (EB) evaporation and radio-frequency sputtering (SP) were investigated by …