Atomic layer deposition (ALD) is gaining attention as a thin film deposition method, uniquely
suitable for depositing uniform and conformal films on complex three-dimensional …

Atomic layer deposition (ALD) is a method that allows for the deposition of thin films with
atomic level control of the thickness and an excellent conformality on 3-dimensional …

This review article provides the state-of-art research and developments of the rectenna
device and its two main components–the antenna and the rectifier. Furthermore, the history …

We report on zinc oxide (ZnO)-based devices produced by a fast, open-air atomic layer
deposition (ALD) process relying upon the spatial isolation of reactive gases. At deposition …

The continued dominance of copper in microelectronic manufacturing is due in part to the
techniques that have kept pace with the relentless trend towards smaller feature sizes. Pure …

We study the dielectric strength of vacuum gaps of under 100 nm. We find their dielectric
strengths to have a power law dependence on the gap size. We apply this power law to find …

We present a new and viable method for optical rectification. This approach has been
demonstrated both theoretically and experimentally and is the basis fot the development of …

Herein, we describe a process for the low-temperature atomic layer deposition of copper
using Cu (dmap) 2 (dmap= dimethylamino-2-propoxide). The use of tertiary butyl hydrazine …

Area-selective atomic layer deposition (AS-ALD) has attracted immense attention in recent
years for self-aligned accurate pattern placement with subnanometer thickness control …

Here, we report nano-patterning of TiO2 via area selective atomic layer deposition (AS-ALD)
using an e-beam patterned growth inhibition polymer. Poly (methylmethacrylate)(PMMA) …