Transistors based on two-dimensional materials for future integrated circuits
Field-effect transistors based on two-dimensional (2D) materials have the potential to be
used in very large-scale integration (VLSI) technology, but whether they can be used at the …
used in very large-scale integration (VLSI) technology, but whether they can be used at the …
Recent developments in 2D transition metal dichalcogenides: phase transition and applications of the (quasi-) metallic phases
The advent of two-dimensional transition metal dichalcogenides (2D-TMDs) has led to an
extensive amount of interest amongst scientists and engineers alike and an intensive …
extensive amount of interest amongst scientists and engineers alike and an intensive …
Benchmarking monolayer MoS2 and WS2 field-effect transistors
Here we benchmark device-to-device variation in field-effect transistors (FETs) based on
monolayer MoS2 and WS2 films grown using metal-organic chemical vapor deposition …
monolayer MoS2 and WS2 films grown using metal-organic chemical vapor deposition …
Large-scale flexible and transparent electronics based on monolayer molybdenum disulfide field-effect transistors
Atomically thin molybdenum disulfide (MoS2) is a promising semiconductor material for
integrated flexible electronics due to its excellent mechanical, optical and electronic …
integrated flexible electronics due to its excellent mechanical, optical and electronic …
Emerging MoS2 Wafer-Scale Technique for Integrated Circuits
Z Ye, C Tan, X Huang, Y Ouyang, L Yang, Z Wang… - Nano-micro letters, 2023 - Springer
As an outstanding representative of layered materials, molybdenum disulfide (MoS2) has
excellent physical properties, such as high carrier mobility, stability, and abundance on …
excellent physical properties, such as high carrier mobility, stability, and abundance on …
Heterogeneous complementary field-effect transistors based on silicon and molybdenum disulfide
Complementary field-effect transistors—which have n-type and p-type field-effect transistors
(FETs) vertically stacked on top of each other—can boost area efficiency in integrated …
(FETs) vertically stacked on top of each other—can boost area efficiency in integrated …
The road for 2D semiconductors in the silicon age
Continued reduction in transistor size can improve the performance of silicon integrated
circuits (ICs). However, as Moore's law approaches physical limits, high‐performance …
circuits (ICs). However, as Moore's law approaches physical limits, high‐performance …
Wafer-Scale Highly Oriented Monolayer MoS2 with Large Domain Sizes
Two-dimensional molybdenum disulfide (MoS2) is an emergent semiconductor with great
potential in next-generation scaled-up electronics, but the production of high-quality …
potential in next-generation scaled-up electronics, but the production of high-quality …
Two-dimensional semiconductor integrated circuits operating at gigahertz frequencies
Two-dimensional transition metal dichalcogenides could potentially be used to create
transistors that are scaled beyond the capabilities of silicon devices. However, despite …
transistors that are scaled beyond the capabilities of silicon devices. However, despite …
Layer-by-layer epitaxy of multi-layer MoS2 wafers
The 2D semiconductor of MoS2 has great potential for advanced electronics technologies
beyond silicon. So far, high-quality monolayer MoS2 wafers have been available and …
beyond silicon. So far, high-quality monolayer MoS2 wafers have been available and …