BEOL Three-Dimensional Stackable Oxide Semiconductor CMOS Inverter with a High Voltage Gain of 233 at Cryogenic Temperatures
Targeting high-performance computing at cryogenic temperatures, we report back-end-of-
line (BEOL)-compatible p-type Te-TeO x field effect transistors (FETs) deposited using a …
line (BEOL)-compatible p-type Te-TeO x field effect transistors (FETs) deposited using a …
Top-Gate Indium-Tin-Oxide Power Transistors Featuring High Breakdown Voltage of 156 V
In this letter, a top-gate (TG) indium-tin-oxide (ITO) power field-effect transistor (FET) with
offset design is reported for the first time and carefully investigated by both simulations and …
offset design is reported for the first time and carefully investigated by both simulations and …
Advancing the Understanding of Reliability in BEOL-Compatible Oxide Semiconductor Transistors: The Impact of AC PBTI
This article presents an in-depth investigation into the impact of alternating current (ac) and
direct current (dc) positive bias temperature instability (PBTI) on hydrogen (H) formation in …
direct current (dc) positive bias temperature instability (PBTI) on hydrogen (H) formation in …
Monolithic 3D Integration of 1T1C AFeRAM with InGaZnO/InO Dual-Channel FET and AFE ZrO2 Capacitor for Low-Power and High-Density Embedded Nonvolatile …
M Ma, G Lin, J Xu, H Qian, R Shen… - IEEE Electron …, 2024 - ieeexplore.ieee.org
We have developed and fabricated 1T1C antiferroelectric RAM (AFeRAM) with InGaZnO
(IGZO)/InO dual-channel FET and antiferroelectric (AFE) ZrO 2 capacitor for monolithic 3D …
(IGZO)/InO dual-channel FET and antiferroelectric (AFE) ZrO 2 capacitor for monolithic 3D …
Suppressed Capacitive Coupling in 2 Transistor Gain Cell With Oxide Channel and Split Gate
In this article, the impact of capacitive coupling in the oxide-channel-based 2 transistor gain
cell (2TGC) is evaluated. The study is performed using an experimentally calibrated TCAD …
cell (2TGC) is evaluated. The study is performed using an experimentally calibrated TCAD …
BEOL-Compatible On-Chip DC-DC Converters
We have developed back-end-of-line (BEOL)-compatible on-chip DC-DC converters using
amorphous oxide semiconductor (AOS) power transistor technology. Simulation results of …
amorphous oxide semiconductor (AOS) power transistor technology. Simulation results of …
Monolithic Switched-Capacitor DC–DC Converters Using BEOL-Compatible Oxide Power Transistors and Superlattice MIM Capacitors
This work reports the first experimental demonstration of on-chip switched-capacitor (SC) dc-
dc voltage converters, where two types of back-end-of-line (BEOL) compatible device …
dc voltage converters, where two types of back-end-of-line (BEOL) compatible device …