In the modern semiconductor industry, there is a growing need to understand and combat
potential radiation damage problems. Space applications are an obvious case, but, beyond …

A review of radiation-induced displacement damage effects in semiconductor devices is
presented, with emphasis placed on silicon technology. The history of displacement damage …

The effects that space and nuclear radiation have on GaAs devices utilized for integrated
circuit design are reviewed. The hardness capability of contemporary GaAs devices and …

The electrical characteristics and microstructures of β-Ga 2 O 3 Schottky barrier diode (SBD)
devices irradiated with swift heavy ions (2096 MeV Ta ions) have been studied. It was found …

The effect of r irradiation on deep electron states in liquid encapsulated Czochralski (LEC)
grown GaAs has been investigated by deep-level transient spectroscopy (OLTS) and …

To elucidate the effects of radiation on GaAs monolithic microwave integrated circuits
(MMICs), radiation-induced changes in DC parameters of test FETs and in the measured …

Gallium arsenide n-channel MESFETs were irradiated with gamma rays up to 2.4* 10/sup
7/rads and with neutrons from 2.1* 10/sup 13/to 2.1* 10/sup 15/n/cm/sup 2/, partially …

In this paper, we report experimental results and theoretical investigations of neutron
irradiation-induced carrier-removal rate and mobility degradation in AlGaAs/GaAs …

Particle irradiation effects in III-V semiconductor devices and selected circuits are reviewed.
Radiation effects concerns in III-V devices are associated primarily with displacement …

The high electron mobility of GaAs and related III–V compounds renders these materials
very suitable for high-speed digital and microwave/millimeter wave applications. The …