Recent decades have witnessed flourishing prosperity of III-nitride emitters in solid-state
lighting and high-resolution displays. As one of the widely used substrates, sapphire shows …

Owing to the high carrier density and high electron mobility of the two dimensional electron
gas (2DEG), high electron mobility transistors (HEMTs) based on gallium nitride (GaN) are …

GaN and related III-nitrides have attracted considerable attention as promising materials for
application in optoelectronic devices, in particular, light-emitting diodes (LEDs). At present …

Recent research results pertaining to InN, GaN and AlN are reviewed, focusing on the
different growth techniques of Group III-nitride crystals and epitaxial films, heterostructures …

The role of extended and point defects, and key impurities such as C, O, and H, on the
electrical and optical properties of GaN is reviewed. Recent progress in the development of …

The use of III-nitride-based light-emitting diodes (LEDs) is now widespread in applications
such as indicator lamps, display panels, backlighting for liquid-crystal display TVs and …

1. Introduction Recently, blue-or ultraviolet-light-emitting lasers have been developed using
GaN and InGaN-based compound semiconductors.*** These device structures have been …

InGaN multi-quantum-well-structure laser diodes with Al0. 14Ga0. 86N/GaN modulation
doped strained-layer superlattice cladding layers grown on an epitaxially laterally …

With the increasing requirements for microelectromechanical systems (MEMS) regarding
stability, miniaturization and integration, novel materials such as wide band gap …

Facet structures of GaN grown by epitaxial lateral overgrowth (ELO) via low-pressure
metalorganic vapor-phase epitaxy (LP-MOVPE) are controlled by growth conditions such as …