Comparing the mechanical and thermal-electrical properties of sintered copper (Cu) and sintered silver (Ag) joints

TF Chen, KS Siow - Journal of alloys and Compounds, 2021 - Elsevier
This review compares the mechanical and thermal-electrical properties of sintered copper
(Cu) with sintered silver (Ag) as bonding materials in the microelectronics joint applications …

Identifying the development state of sintered silver (Ag) as a bonding material in the microelectronic packaging via a patent landscape study

KS Siow, YT Lin - Journal of Electronic Packaging, 2016 - asmedigitalcollection.asme.org
Sintered silver joint is a porous silver that bonds a semiconductor die to the substrate as part
of the packaging process. Sintered Ag is one of the few possible bonding methods to fulfill …

Microstructural studies and bonding strength of pressureless sintered nano-silver joints on silver, direct bond copper (DBC) and copper substrates aged at 300 C

ST Chua, KS Siow - Journal of Alloys and Compounds, 2016 - Elsevier
Sintered Ag joint is a potential Pb-free die attach materials for power electronics because of
its high operating temperature, high electrical and thermal conductivity as well as its thermo …

[图书][B] Encapsulation technologies for electronic applications

H Ardebili, J Zhang, MG Pecht - 2018 - books.google.com
Encapsulation Technologies for Electronic Applications, Second Edition, offers an updated,
comprehensive discussion of encapsulants in electronic applications, with a primary …

Reliability of Ag sintering for power semiconductor die attach in high-temperature applications

F Yu, J Cui, Z Zhou, K Fang… - … on Power Electronics, 2016 - ieeexplore.ieee.org
Low-temperature Ag sintering provides a lead-free die attachment method that is compatible
with high-temperature (300° C) power electronics applications. The reliability of sintered Ag …

Design and experimental validation of a wire-bond-less 10-kV SiC MOSFET power module

C DiMarino, B Mouawad, CM Johnson… - IEEE Journal of …, 2019 - ieeexplore.ieee.org
Wide bandgap (WBG) power devices with voltage ratings exceeding 10 kV have the
potential to revolutionize medium-and high-voltage systems due to their high-speed …

Pressureless and low-temperature sinter-joining on bare Si, SiC and GaN by a Ag flake paste

Z Zhang, C Chen, A Suetake, MC Hsieh, A Iwaki… - Scripta Materialia, 2021 - Elsevier
In this work, we applied a Ag flake formed paste for sinter-joining on bare Si, SiC, and GaN
surfaces. The sintered joints possess a high shear strength of over 40 MPa under a …

Microstructural evolution and degradation mechanism of SiC–Cu chip attachment using sintered nano-Ag paste during high-temperature ageing

F Yang, W Zhu, W Wu, H Ji, C Hang, M Li - Journal of Alloys and …, 2020 - Elsevier
The high-temperature reliability of nano-Ag pastes on bare Cu substrates is of great
significance in power electronics. Although Cu metallization in sintered joints is susceptible …

Reliability of Ag sinter-joining die attach under harsh thermal cycling and power cycling tests

Z Zhang, C Chen, A Suetake, MC Hsieh… - Journal of Electronic …, 2021 - Springer
Silver (Ag) sinter-joining is an ideal connection technique for wide bandgap (WBG) power
electronics packaging due to its excellent high-temperature stability and excellent thermal …

Reliability evaluation of SiC power module with sintered Ag die attach and stress-relaxation structure

K Sugiura, T Iwashige, K Tsuruta… - IEEE Transactions …, 2019 - ieeexplore.ieee.org
Silicon carbide (SiC) power modules with Ag sinter-bonding die attach were designed on
the basis of thermal stress analysis for reliable high-temperature operations. Both the finite …