Ferroelectric field effect transistors (FeFETs): advancements, challenges and exciting prospects for next generation non-volatile memory (NVM) applications
Data intensive applications such as AI (Artificial Intelligence) and IoT (Internet of Things)
demand high performance and highly reliable non-volatile memories (NVM). FeFET offers …
demand high performance and highly reliable non-volatile memories (NVM). FeFET offers …
Ferroelectricity of hafnium oxide-based materials: Current status and future prospects from physical mechanisms to device applications
W Yang, C Yu, H Li, M Fan, X Song, H Ma… - Journal of …, 2023 - iopscience.iop.org
The finding of the robust ferroelectricity in HfO 2-based thin films is fantastic from the view
point of both the fundamentals and the applications. In this review article, the current …
point of both the fundamentals and the applications. In this review article, the current …
Fast read-after-write and depolarization fields in high endurance n-type ferroelectric FETs
Ferroelectric field-effect transistors (FeFETs) based on HfO 2 are promising for low-power
and high-speed non-volatile memory devices. However, most reported FeFETs show limited …
and high-speed non-volatile memory devices. However, most reported FeFETs show limited …
Enhanced Ferroelectricity in Hf‐Based Ferroelectric Device with ZrO2 Regulating Layer
HfAlO film‐based ferroelectric memory is a strong contender for the next‐generation
nonvolatile memories. However, the remanent polarization intensity of HfAlO films is small …
nonvolatile memories. However, the remanent polarization intensity of HfAlO films is small …
High performance ferroelectric field-effect transistors for large memory-window, high-reliability, high-speed 3D vertical NAND flash memory
A ferroelectric field-effect transistor (FeFET) has significant potential as a leading contender
to replace current NAND flash memory owing to its high operation speed, low power …
to replace current NAND flash memory owing to its high operation speed, low power …
Ferroelectric HfO2-based synaptic devices: recent trends and prospects
Neuro-inspired deep learning algorithms have shown promising futures in artificial
intelligence. Despite the remarkable progress in software-based neural networks, the …
intelligence. Despite the remarkable progress in software-based neural networks, the …
First direct observation of the built-in electric field and oxygen vacancy migration in ferroelectric Hf 0.5 Zr 0.5 O 2 film during electrical cycling
The wake-up and fatigue effects exhibited by ferroelectric hafnium oxide (HfO2) during
electrical cycling are two of the most significant obstacles limiting its development and …
electrical cycling are two of the most significant obstacles limiting its development and …
Improved reliability for back-end-of-line compatible ferroelectric capacitor with 3 bits/cell storage capability by interface engineering and post deposition annealing
HK Peng, TC Lai, YC Kao, CM Liu… - IEEE Electron Device …, 2022 - ieeexplore.ieee.org
AlON/HfZrOx (HZO)/HfO2 stack with post-deposition annealing (PDA) process at 400° C is
proposed to implement BEOL compatible ferroelectric (FE) capacitors. While interface …
proposed to implement BEOL compatible ferroelectric (FE) capacitors. While interface …
Low-power and high-speed HfLaO-based FE-TFTs for artificial synapse and reconfigurable logic applications
Emulating the human nervous system to build next-generation computing architectures is
considered a promising way to solve the von Neumann bottleneck. Transistors based on …
considered a promising way to solve the von Neumann bottleneck. Transistors based on …
Disturb-free operations of multilevel cell ferroelectric FETs for NAND applications
C Jin, J Xu, J Gu, J Zhao, X Jia, J Chen… - … on Electron Devices, 2023 - ieeexplore.ieee.org
We have experimentally investigated disturb-free operations of multilevel cell (MLC)
ferroelectric field-effect transistors (FeFETs) in a NAND array. The fabricated FeFET cells are …
ferroelectric field-effect transistors (FeFETs) in a NAND array. The fabricated FeFET cells are …