This paper compares different photocathodes that are applicable for electron injector
systems and summarizes the development in cathode technology in the last years. The …

C $^ 3$ is an opportunity to realize an e $^+ $ e $^-$ collider for the study of the Higgs
boson at $\sqrt {s}= 250$ GeV, with a well defined upgrade path to 550 GeV while staying on …

New spin-dependent photoemission properties of alkali antimonide semiconductor cathodes
are predicted based on the detected optical spin orientation effect and DFT band structure …

C 3 is an opportunity to realize an e+ e-collider for the study of the Higgs boson at√ s= 250
GeV, with a well defined upgrade path to 550 GeV while staying on the same short facility …

Spin-polarized photoemission from wurtzite and zinc blende gallium nitride (GaN)
photocathodes has been observed and measured. The p-doped GaN photocathodes were …

GaAs photocathodes are the primary choice for generating spin-polarized electron beam
with high brightness, high polarization, and fast polarization reversal. However, it suffers …

To clarify the performance differences between Cs-O and Cs-NF 3-activated GaAs
photocathodes, the changes in adsorption characteristics with Cs coverage for the Cs-O and …

Photocathodes based on GaAs and other III–V semiconductors are capable of producing
highly spin-polarized electron beams. GaAs/GaAsP superlattice photocathodes exhibit high …

GaAs-based photocathodes are the state-of-the-art in the production of highly spin-polarized
electron beams for accelerator and microscopy applications. While various novel structures …

The surface Cs–O activation process directly determines quantum efficiency and stability of
negative-electron-affinity photocathodes. To investigate the effects of excessive Cs and O …