The coating of complex three-dimensional structures with ultrathin metal films is of great
interest for current technical applications, particularly in microelectronics, as well as for basic …

Recent trends in the microelectronics industry are requiring the growth of metallic first row
transition metal films by the atomic layer deposition (ALD) method. The ALD growth of noble …

Current nanopatterning techniques used for integrated circuit fabrication typically rely on a
combination of deposition, lithography, and etch steps. Due to alignment issues …

The atomic layer deposition (ALD) of Ru using a metal–organic precursor, tricarbonyl
(trimethylenemethane) ruthenium [Ru (TMM)(CO) 3] and O2 as a reactant is reported. The …

Cobalt metal films have important applications as magnetic materials, precursors to CoSi2
contact materials, and liners and caps of copper features in microelectronics devices. 1− 6 …

The atomic layer deposition of copper metal thin films was achieved using a three precursor
sequence entailing Cu (OCHMeCH2NMe2) 2, formic acid, and hydrazine. A constant growth …

Achieving atomic-scale precise control over material layering is critical for the development
of future semiconductor technology. Area-selective deposition (ASD) has emerged as an …

Semiconductors such as elemental silicon allowing both p‐type and n‐type doping are the
backbone of the current microelectronics industry, while the continuous progress in …

The atomic layer deposition (ALD) of Cu metal films was carried out by a two-step process
with Cu (OCHMeCH2NMe2) 2 and BH3 (NHMe2) on Ru substrates and by a three-step …

The atomic layer deposition (ALD) of cobalt metal films is described using the precursor bis
(1, 4-di-tert-butyl-1, 3-diazadienyl) cobalt and tert-butylamine or diethylamine. Platinum …