Germanium is being actively considered by the semiconductor community as a mainstream
material for nanoelectronic applications. Germanium has advantageous materials …

The concept of direct band gap group IV materials may offer a paradigm change for Si-
photonics concerning the monolithic implementation of light emitters: the idea is to integrate …

The possibility to excite and control charges in matter on ultrafast timescales is a key
requisite to overcome the current limits of information transfer and data processing. The …

Tensile strain is a widely discussed means for inducing a direct bandgap in Ge for the
realization of a semiconductor laser compatible with Si microelectronics. We present a top …

Boron nitride (BN) and carbon are chemical analogues of each other and share similar
structures such as one-dimensional nanotubes, two-dimensional nanosheets characterized …

In this Letter we present the electrical and electro-optical characterization of single
crystalline germanium nanowires (NWs) under tensile strain conditions. The measurements …

Research into self-assembled semiconductor quantum dots (QDs) has helped advance
numerous optoelectronic applications, ranging from solid-state lighting to photodetectors. By …

The controlled application of strain in crystalline semiconductors can be used to modify their
basic physical properties to enhance performance in electronic and photonic device …

Lately, germanium based materials attract a lot of interest as they can overcome some limits
inherent to standard Silicon Photonics devices and can be used notably in Mid-Infra-Red …

High tensile strains in Ge are currently studied for the development of integrated laser
sources on Si. In this work, we developed specific Germanium-On-Insulator 200 mm wafer to …