Annealing-induced phase transformation in In 10 Se 70 Te 20 thin films and its structural, optical and morphological changes for optoelectronic applications

S Giri, P Priyadarshini, D Alagarasan, R Ganesan… - RSC …, 2023 - pubs.rsc.org
In2Se3 and In2Te3 have great importance in various device fabrications. The present report
is based on the annealing-induced phase formation of both In2Se3 and In2Te3 from …

Impact on nonlinear/linear optical and structural parameters in quaternary In15Ag10S15Se60 thin films upon annealing at different temperatures

A Parida, D Sahoo, D Alagarasan… - Ceramics …, 2022 - Elsevier
In the present study, the effect of thermal annealing on structural, linear, and nonlinear
optical properties of quaternary chalcogenide In 15 Ag 10 S 15 Se 60 thin film has been …

Influence of Te replacement by Bi in In10Se70Te20-xBix films and its structural, optical, morphological, surface wettability and thermal behaviors for optoelectronic …

S Giri, P Priyadarshini, D Alagarasan, R Ganesan… - Optical Materials, 2023 - Elsevier
The current investigation is based on Bi doping into In–Se–Te alloy and its impact on the
surface morphology, structure, and optical behaviors. The transition from In 10 Se 70 Te 20 …

Glass transition, thermal stability and glass-forming tendency of Se90− xTe5Sn5Inx multi-component chalcogenide glasses

S Kumar, K Singh - Thermochimica acta, 2012 - Elsevier
Glass transition kinetics of glassy Se90− xTe5Sn5Inx (x= 0, 3, 6 and 9) alloys have been
investigated using differential scanning calorimetric (DSC) technique under non-isothermal …

Structural and optical properties of Se85−xTe15Inx chalcogenide thin films for optoelectronics

MM Soraya - Applied Physics A, 2020 - Springer
In the present work, different compositions of Se 85− x Te 15 In x (x= 0, 2, 4, 6, 8, 10 at%)
chalcogenide glass were synthesized by rabid quenching of the melt. Optical …

Optical and electrical applications of ZnS x Se 1− x nanowires-network with uniform and controllable stoichiometry

J Lu, H Liu, C Sun, M Zheng, M Nripan, GS Chen… - Nanoscale, 2012 - pubs.rsc.org
Single crystalline ternary ZnSxSe1− x nanowires with uniform chemical stoichiometry and
accurately controllable compositions (0≤ x≤ 1) were synthesized through a simple and yet …

Glass transition and crystallization kinetics of Inx (Se0. 75Te0. 25) 100− x chalcogenide glasses

AM Abd Elnaeim, KA Aly, N Afify… - Journal of Alloys and …, 2010 - Elsevier
The results of differential scanning calorimetry (DSC) under non-isothermal conditions of the
chalcogenide Inx (Se0. 75Te0. 25) 100− x (where 0≤ x≤ 10at.%) glasses are reported and …

Effect of Sb additive on the electrical properties of Se–Te alloy

SK Tripathi, V Sharma, A Thakur, J Sharma… - Journal of non …, 2005 - Elsevier
Electrical measurements have been carried out on a-Se85− xTe15Sbx (x= 0, 2, 4, 6 and
10at.%) thin films. The dark conductivity (σd), photoconductivity (σph) increase and …

[PDF][PDF] Investigating the optical and electrical characteristics of As60Cu40-xSex thin films prepared using pulsed laser deposition method

JS Mohammed - Chalcogen. Lett, 2023 - researchgate.net
In several technological contexts, the pulse laser deposition method is one of the most
effective and affordable methods for semiconductor, mineral, and oxide deposits. Despite …

Improvement of the electrical properties of Se3Te1 thin films by in additions

KA Aly, AM Abd Elnaeim, N Afify… - Journal of non-crystalline …, 2012 - Elsevier
The electronic and photoconductivity properties of semiconducting chalcogenide glasses
have been largely stimulated by attractive micro-electronic device applications. The present …