Review of gallium-oxide-based solar-blind ultraviolet photodetectors
Solar-blind photodetectors are of great interest to a wide range of industrial, civil,
environmental, and biological applications. As one of the emerging ultrawide-bandgap …
environmental, and biological applications. As one of the emerging ultrawide-bandgap …
β-Ga2O3 for wide-bandgap electronics and optoelectronics
Z Galazka - Semiconductor Science and Technology, 2018 - iopscience.iop.org
Abstract β-Ga 2 O 3 is an emerging, ultra-wide bandgap (energy gap of 4.85 eV) transparent
semiconducting oxide, which attracted recently much scientific and technological attention …
semiconducting oxide, which attracted recently much scientific and technological attention …
Perspective: Ga2O3 for ultra-high power rectifiers and MOSFETS
Gallium oxide (Ga2O3) is emerging as a viable candidate for certain classes of power
electronics with capabilities beyond existing technologies due to its large bandgap …
electronics with capabilities beyond existing technologies due to its large bandgap …
Self-Powered Ultraviolet Photodetector with Superhigh Photoresponsivity (3.05 A/W) Based on the GaN/Sn:Ga2O3 pn Junction
Ultraviolet (UV) radiation has a variety of impacts including the health of humans, the
production of crops, and the lifetime of buildings. Based on the photovoltaic effect, self …
production of crops, and the lifetime of buildings. Based on the photovoltaic effect, self …
[HTML][HTML] Guest Editorial: The dawn of gallium oxide microelectronics
M Higashiwaki, GH Jessen - Applied Physics Letters, 2018 - pubs.aip.org
Among semiconductors, Si is the foundational technology against which all others are
compared. The bandgap is large enough to allow for the conductivity of the material to be …
compared. The bandgap is large enough to allow for the conductivity of the material to be …
MOCVD homoepitaxy of Si-doped (010) β-Ga2O3 thin films with superior transport properties
Record-high electron mobilities were achieved for silicon-doped (010) β-Ga 2 O 3
homoepitaxial films grown via metalorganic chemical vapor deposition (MOCVD). Key …
homoepitaxial films grown via metalorganic chemical vapor deposition (MOCVD). Key …
[HTML][HTML] Donors and deep acceptors in β-Ga2O3
We have studied the properties of Si, Ge shallow donors and Fe, Mg deep acceptors in β-Ga
2 O 3 through temperature dependent van der Pauw and Hall effect measurements of …
2 O 3 through temperature dependent van der Pauw and Hall effect measurements of …
State-of-the-art technologies of gallium oxide power devices
M Higashiwaki, A Kuramata, H Murakami… - Journal of Physics D …, 2017 - iopscience.iop.org
Abstract Gallium oxide (Ga $ _ {2} $ O $ _ {3} $) has gained increased attention for power
devices due to its superior material properties and the availability of economical device …
devices due to its superior material properties and the availability of economical device …
Recessed-Gate Enhancement-Mode -Ga2O3 MOSFETs
We report enhancement-mode-Ga 2 O 3 (BGO) MOSFETs on a Si-doped homoepitaxial
channel grown by molecular beam epitaxy. A gate recess process is used to partially …
channel grown by molecular beam epitaxy. A gate recess process is used to partially …
High responsivity in molecular beam epitaxy grown β-Ga2O3 metal semiconductor metal solar blind deep-UV photodetector
A Singh Pratiyush, S Krishnamoorthy… - Applied Physics …, 2017 - pubs.aip.org
In this report, we demonstrate high spectral responsivity (SR) in MBE grown epitaxial b-
Ga2O3-based solar blind metal-semiconductor-metal (MSM) photodetectors (PD). The …
Ga2O3-based solar blind metal-semiconductor-metal (MSM) photodetectors (PD). The …