In this article, we investigate Schottky diodes with pure W and WC alloy metal electrodes.
The electrical characteristics of samples were analyzed by comparing the current density …

In this work, we studied different proportions of Mo-C alloy Schottky contacts. Compare the
electrical characteristics and SiC interface with the Mo/4H-SiC based diodes. The Schottky …

Heterogeneous integration of 4H-SiC film with Si substrate can produce ultraviolet (UV)
photodetectors (PD) with higher performance and easier integration with silicon CMOS …

We have characterised the deep level defects present before and after annealing the proton-
irradiated Ni/nitrogen-doped 4H-SiC Schottky barrier diodes (SBDs) using deep level …

ZnO thin films have been used in various applications such as optoelectronic devices, solar
cell window layers, UV detectors and space applications. The devices based on ZnO should …

The electrical behavior improvement of nonuniform Ni/4H-SiC Schottky diodes, akin to that
caused by thermal annealing, is demonstrated after continuous exposure to high operating …

An ultra-high voltage SiC JBS (silicon carbide junction barrier Schottky) rectifier utilizing a
novel area-efficient multi-zone gradient modulated field limiting ring (MGM-FLR) technique …

The fabrication of Schottky barrier diodes based on thin films of 21H polytype of SiC is
reported. The films were deposited using a single composite target of Si and graphite by …

Impurities play a major role in identifying the most enhanced defect-levels induced in 4H–
SiC. Among the important n-and p-type dopants in SiC are the P and Al, respectively. The P …

The fabrication of Schottky barrier diodes based on thin films of 21H polytype of SiC is
reported. The films were deposited using a single composite target of Si and graphite by …