The emergence and prospects of deep-ultraviolet light-emitting diode technologies
Abstract By alloying GaN with AlN the emission of AlGaN light-emitting diodes can be tuned
to cover almost the entire ultraviolet spectral range (210–400 nm), making ultraviolet light …
to cover almost the entire ultraviolet spectral range (210–400 nm), making ultraviolet light …
[HTML][HTML] Perspectives on UVC LED: Its progress and application
TC Hsu, YT Teng, YW Yeh, X Fan, KH Chu, SH Lin… - Photonics, 2021 - mdpi.com
High-quality epitaxial layers are directly related to internal quantum efficiency. The methods
used to design such epitaxial layers are reviewed in this article. The ultraviolet C (UVC) light …
used to design such epitaxial layers are reviewed in this article. The ultraviolet C (UVC) light …
[PDF][PDF] Graphene-based LED: From principle to devices
Group-III nitride (III-N) films have numerous applications in LEDs, lasers, and high-
power/high-frequency electronic devices because of their direct wide band gap, high …
power/high-frequency electronic devices because of their direct wide band gap, high …
III–nitride UV devices
MA Khan, M Shatalov, HP Maruska… - Japanese journal of …, 2005 - iopscience.iop.org
The need for efficient, compact and robust solid-state UV optical sources and sensors had
stimulated the development of optical devices based on III–nitride material system. Rapid …
stimulated the development of optical devices based on III–nitride material system. Rapid …
Unique optical properties of AlGaN alloys and related ultraviolet emitters
Deep UV photoluminescence spectroscopy has been employed to study the optical
properties of Al x Ga 1− x N alloys (0⩽ x⩽ 1). The emission intensity with polarization of …
properties of Al x Ga 1− x N alloys (0⩽ x⩽ 1). The emission intensity with polarization of …
Quaternary InAlGaN-based high-efficiency ultraviolet light-emitting diodes
H Hirayama - Journal of Applied Physics, 2005 - pubs.aip.org
In order to realize 250–350-nm-band high-efficiency deep ultraviolet (UV) emitting devices
using group-III-nitride materials, it is necessary to obtain high-efficiency UV emission from …
using group-III-nitride materials, it is necessary to obtain high-efficiency UV emission from …
[HTML][HTML] 新型石墨烯基LED 器件: 从生长机理到器件特性
陈召龙， 高鹏， 刘忠范 - 物理化学学报, 2019 - whxb.pku.edu.cn
Ⅲ 族氮化物因具有禁带宽度大, 击穿电压高, 电子饱和漂移速度大, 稳定性高等优异特性而广泛
应用在发光二极管(LED), 激光器以及高频器件中. 目前Ⅲ 族氮化物薄膜通常是异质外延生长在 …
应用在发光二极管(LED), 激光器以及高频器件中. 目前Ⅲ 族氮化物薄膜通常是异质外延生长在 …
Effect of crystal-field split-off hole and heavy-hole bands crossover on gain characteristics of high Al-content AlGaN quantum well lasers
The optical gain characteristics of high Al-content AlGaN quantum wells (QWs) are analyzed
for deep UV lasers. The effect of crystal-field split-off hole (CH) and heavy-hole (HH) bands …
for deep UV lasers. The effect of crystal-field split-off hole (CH) and heavy-hole (HH) bands …
200nm deep ultraviolet photodetectors based on AlN
High quality AlN epilayers were grown on sapphire substrates by metal organic vapor
deposition and exploited as active deep ultraviolet (DUV) optoelectronic materials through …
deposition and exploited as active deep ultraviolet (DUV) optoelectronic materials through …
250nmAlGaN light-emitting diodes
V Adivarahan, WH Sun, A Chitnis, M Shatalov… - Applied physics …, 2004 - pubs.aip.org
We report AlGaN deep ultraviolet light-emitting diodes (LEDs) at 250 and 255 nm that have
short emission wavelengths. For an unpackaged 200× 200 μ m square geometry LED …
short emission wavelengths. For an unpackaged 200× 200 μ m square geometry LED …