As the minimum feature size of integrated circuit elements has shrunk below 7 nm, chemical
mechanical planarization (CMP) technology has grown by leaps and bounds over the past …

Displays in which arrays of microscopic 'particles', or chiplets, of inorganic light-emitting
diodes (LEDs) constitute the pixels, termed MicroLED displays, have received considerable …

This paper provides a detailed overview of the environmental impacts and sustainability of
chemical mechanical planarization (CMP) consumable manufacturing in the semiconductor …

As semiconductor integrated circuits (SICs) have been developed to scale down to obtain
higher integration and better performance, more chemical mechanical polishing (CMP) …

The effect of ceria concentration on the removal rate of silicon oxide via chemical
mechanical planarization was investigated. The removal rate decreased with increasing …

The presence of the detrimental PbI2 residue at the buried interface negatively affects the
photovoltaic performance of perovskite solar cells (PSCs). However, the underlying …

After CMP, the removal of ceria nanoparticle residues is difficult due to the formation of Ce–
O–Si chemical bonds on the SiO 2 film surface. After STI CMP, several post-CMP cleaning …

Ceria (CeO 2) abrasive is extensively used in the chemical mechanical polishing process
(CMP) for shallow trench isolation (STI) owing to its capability to form Ce-O-Si bonds with the …

Shallow trench isolation (STI), as a key technology for device isolation, is commonly
planarized with ceria slurry in chemical mechanical polishing (CMP). Due to the ceria …

Ceria removal during the STI post-CMP cleaning process has recently become a serious
concern in the semiconductor industry. Understanding ceria adhesion and its removal …