Gallium nitride (GaN) semiconductor devices must be fabricated using plasma etching with
precise control of the etching depths and minimal plasma-induced damage on the atomic …

A new binary collision approach for the calculation of the sputtering yield of Si under
nonreactive ionic bombardment by Ar+ is presented for the energy range from threshold to …

Methane (CH 4) concentration and temperature distributions were measured in a
semiconductor process chamber using computed tomography-tunable diode laser …

We measured methane (CH 4) concentration distribution in a semiconductor process
chamber by using the computed tomography-tunable diode laser spectroscopy (CT-TDLAS) …

In recent years, semiconductor devices have been highly integrated. Large scale transistors
with complicated fine structures like the three-dimensional NOT-AND flash memories [1] or …

In the photolithography process, a requisite mask layout is printed into a polymer layer. This
layer, in turn, is transferred onto underlying inorganic/organic material layers for the …