When an electric current passes from one ferromagnetic layer via a non-magnetic layer into
another ferromagnetic layer, the spin polarization and subsequent rotation of this current can …

Spin-momentum transfer between a spin-polarized current and a ferromagnetic layer can
induce steady-state magnetization precession, and has recently been proposed as a …

The tunnel magnetoresistance (TMR) effect with a perpendicularly magnetized D0 22-Mn 3-
δ Ga (δ= 0.6) electrode was investigated in epitaxially grown D0 22-Mn 3-δ Ga (30)/Mg (d …

Because tetragonal structured MnGa alloy has intrinsic (not interface induced) giant
perpendicular magnetic anisotropy (PMA), ultra-low damping constant and high spin …

We fabricated epitaxial Mg-Al-O (001) tunnel barriers using direct/indirect plasma oxidation
and natural oxidation of an MgAl layer for use in Fe/Mg-Al-O/Fe magnetic tunnel junctions …

High-purity MgO ceramics with a relative density higher than 99.60% and a mean grain size
of 8.1 µm were prepared by hot-pressing at 1450° C and 35 MPa for 120 min. The MgO …

Atomically smooth Co–Fe–Ta–B glassy films were deposited on variety of substrates (Si, Si
O 2⁠, and keptone). An extensive magnetic characterization in the temperature range from 5 …

MgO-based magnetic tunnel junctions with up to 230% tunnel magnetoresistance ratio at
room temperature and up to 345% at 13 K are prepared. The lower electrode is either …

(57) ABSTRACT A magnetoresistance effect device including a multilayer structure having a
pair of ferromagnetic layers and a barrier layer positioned between them, wherein at least …

Effects of metallic Mg insertion on tunnel magnetoresistance (TMR) effect were investigated
in D0 22-Mn 2.4 Ga/Mg/MgO/CoFe magnetic tunnel junctions (MTJs). The thickness of Mg (d …