Owing to the superior properties of the wide bandgap, high carrier mobility, high thermal
conductivity and high stability, 4H silicon carbide (4H-SiC) holds great promise for …

In addition to possessing unique electrical properties, silicon carbide (SiC) can crystallize in
different modifications (polytypes). Having the same chemical nature, SiC polytypes may …

Only a few years ago, an account of degradation of silicon carbide high-voltage pin diodes
was presented at the European Conference on Silicon Carbide and Related Compounds …

The formation and expansion of recombination-induced stacking faults (SFs) within 4H–SiC
bipolar and unipolar devices is known to induce a drift in the forward voltage during forward …

The morphology and nucleation sites of stacking faults formed during the forward operation
of 4H silicon carbide pin diodes were investigated using optical emission microscopy (OEM) …

The electroluminescence, mobility, and core nature of partial dislocations bounding stacking
faults in 4H silicon carbide pin diodes were investigated using optical emission microscopy …

The driving force of stacking-fault expansion in SiC pin diodes was investigated using
optical emission microscopy and transmission electron microscopy. The stacking-fault …

The expansion behavior of a single Shockley stacking fault (SSSF) originating from a basal
plane dislocation in a 4H-SiC epitaxial layer on the (11 2 0) a-plane under electron beam …

The structure of partial dislocations (PDs), which surround triangular single Shockley
stacking faults (1SSFs) expanded during electroluminescence observation in a 4H-SiC PiN …

We have investigated double-rhombic single Shockley stacking faults (DRSFs) in 4H-SiC
epitaxial layers by analyzing structural details. A combination of plan-view transmission …