Gallium nitride (GaN) is a wide bandgap semiconductor material and is the most popular
material after silicon in the semiconductor industry. The prime movers behind this trend are …

Power electronics belongs to the future key technologies in order to increase system
efficiency as well as performance in automotive and energy saving applications. Silicon is …

Shuji Nakamura's development of commercial light emitters from Gallium Nitride and related
materials has recently propelled these materials into the mainstream of interest. It is very …

The story of Shuji Nakamura and the blue laser diode is remarkable. It is clear from this book
that he enjoys this fact and wishes his readers to become familiar with his success …

Cracking of GaN on Si usually occurs due to the large thermal mismatch of GaN and Si
when layer thicknesses exceed approximately 1 μm in metalorganic chemical vapor …

We present a simple method for the elimination of cracks in GaN layers grown on Si (111).
Cracking of GaN on Si usually occurs due to large lattice and thermal mismatch of GaN and …

We have studied the effect of the III/V ratio and substrate temperature on the growth of GaN
and A1N films on Si (1 1 1) substrates by molecular beam epitaxy, where active nitrogen …

The AlGaInN quaternary alloy system is uniquely suited for numerous device applications
because the bandgap can be varied from 1.9 to 6.2 eV by changing the alloy composition …

We studied thermal annealing effects of low-temperature-grown GaN (LT-GaN) on Si
substrate by use of the two step growth technique. Difficulties were encountered when LT …

Two schemes of nucleation and growth of gallium nitride on Si (111) substrates are
investigated and the structural and electrical properties of the resulting films are reported …