Resistive switching crossbar arrays based on layered materials
Resistive switching (RS) devices are metal/insulator/metal cells that can change their
electrical resistance when electrical stimuli are applied between the electrodes, and they …
electrical resistance when electrical stimuli are applied between the electrodes, and they …
Conductive bridge random access memory (CBRAM): challenges and opportunities for memory and neuromorphic computing applications
Due to a rapid increase in the amount of data, there is a huge demand for the development
of new memory technologies as well as emerging computing systems for high-density …
of new memory technologies as well as emerging computing systems for high-density …
The coexistence of threshold and memory switching characteristics of ALD HfO 2 memristor synaptic arrays for energy-efficient neuromorphic computing
The development of bioinspired electronic devices that can mimic the biological synapses is
an essential step towards the development of efficient neuromorphic systems to simulate the …
an essential step towards the development of efficient neuromorphic systems to simulate the …
Biomaterial-based nonvolatile resistive memory devices toward ecofriendliness and biocompatibility
Advancement in electronic industry has revolutionized the lifestyle of mankind at the cost of
leaving adverse effects on the environment due to the use of toxic and nondegradable …
leaving adverse effects on the environment due to the use of toxic and nondegradable …
Controllable analog resistive switching and synaptic characteristics in ZrO2/ZTO bilayer memristive device for neuromorphic systems
The development of artificial synaptic devices is a crucial step for the realization of efficient
bio-inspired neuromorphic computing systems. In this work, the bilayer ZrO 2/ZTO-based …
bio-inspired neuromorphic computing systems. In this work, the bilayer ZrO 2/ZTO-based …
Cellulose nanocrystal based Bio‐Memristor as a green artificial synaptic device for neuromorphic computing applications
Nanocomposites based on biomaterials are promising candidates for emerging green‐
electronics benefiting from environment‐friendly, renewable, biocompatible, and …
electronics benefiting from environment‐friendly, renewable, biocompatible, and …
Compliance current-controlled conducting filament formation in tantalum oxide-based RRAM devices with different top electrodes
Memristive switching with digital set and multistep analog reset characteristics were
demonstrated in tantalum oxide (Ta2O5)-based resistive random access memory (RRAM) …
demonstrated in tantalum oxide (Ta2O5)-based resistive random access memory (RRAM) …
Emulating synaptic plasticity and resistive switching characteristics through amorphous Ta2O5 embedded layer for neuromorphic computing
Memristors with controllable resistive switching (RS) characteristics gain significant attention
for neuromorphic computing applications in high-density memory and artificial synapses …
for neuromorphic computing applications in high-density memory and artificial synapses …
A review of Mott insulator in memristors: The materials, characteristics, applications for future computing systems and neuromorphic computing
Y Ran, Y Pei, Z Zhou, H Wang, Y Sun, Z Wang, M Hao… - Nano Research, 2023 - Springer
Mott insulator material, as a kind of strongly correlated electronic system with the
characteristic of a drastic change in electrical conductivity, shows excellent application …
characteristic of a drastic change in electrical conductivity, shows excellent application …
Transformation of digital to analog switching in TaOx-based memristor device for neuromorphic applications
A Saleem, FM Simanjuntak, S Chandrasekaran… - Applied Physics …, 2021 - pubs.aip.org
An oxidizable metal diffusion barrier inserted between the active metal electrode and the
switching layer decreases the electroforming voltage and enhances the switching stability …
switching layer decreases the electroforming voltage and enhances the switching stability …