Compositional mapping of semiconductor quantum dots and rings

G Biasiol, S Heun - Physics Reports, 2011 - Elsevier
In this article we review the extensive experimental work on the compositional mapping of
semiconductor quantum dots and rings. After a brief introduction of the various experimental …

Faceting, composition and crystal phase evolution in III–V antimonide nanowire heterostructures revealed by combining microscopy techniques

T Xu, KA Dick, S Plissard, TH Nguyen… - …, 2012 - iopscience.iop.org
III–V antimonide nanowires are among the most interesting semiconductors for transport
physics, nanoelectronics and long-wavelength optoelectronic devices due to their optimal …

Kinetic Monte Carlo simulation of heteroepitaxial growth: Wetting layers, quantum dots, capping, and nanorings

TP Schulze, P Smereka - Physical Review B—Condensed Matter and …, 2012 - APS
A new kinetic Monte Carlo algorithm that efficiently accounts for elastic strain is presented
and applied to study various phenomena that take place during heteroepitaxial growth. For …

The structural, electronic and optical properties of GaSb/GaAs nanostructures for charge-based memory

M Hayne, RJ Young, EP Smakman… - Journal of Physics D …, 2013 - iopscience.iop.org
The potential for GaSb nanostructures embedded in GaAs to operate as charge-based
memory elements at room temperature is introduced and explored. Cross-sectional …

Optical observation of single-carrier charging in type-II quantum ring ensembles

RJ Young, EP Smakman, AM Sánchez… - Applied Physics …, 2012 - pubs.aip.org
A high-purity GaSb/GaAs quantum ring system is introduced that provides both strong hole-
confinement in the GaSb ring and electron confinement in its GaAs core. The latter is …

GaSb/GaAs quantum dot formation and demolition studied with cross-sectional scanning tunneling microscopy

EP Smakman, JK Garleff, RJ Young, M Hayne… - Applied Physics …, 2012 - pubs.aip.org
We present a cross-sectional scanning tunneling microscopy study of GaSb/GaAs quantum
dots grown by molecular beam epitaxy. Various nanostructures are observed as a function …

Tuning the properties of exciton complexes in self-assembled GaSb/GaAs quantum rings

M Ahmad Kamarudin, M Hayne, RJ Young… - Physical Review B …, 2011 - APS
Type-II self-assembled GaSb/GaAs nanostructures have been grown by molecular-beam
epitaxy and studied by atomic-force microscopy, transmission electron microscopy, and …

The disintegration of GaSb/GaAs nanostructures upon capping

AJ Martin, J Hwang, EA Marquis, E Smakman… - Applied Physics …, 2013 - pubs.aip.org
Atom probe tomography and cross-sectional scanning tunneling microscopy show that
GaSb/GaAs quantum dots disintegrate into ring-like clusters of islands upon capping. Band …

Confined states of individual type-II GaSb/GaAs quantum rings studied by cross-sectional scanning tunneling spectroscopy

R Timm, H Eisele, A Lenz, L Ivanova, V Vosseburger… - Nano …, 2010 - ACS Publications
Combined cross-sectional scanning tunneling microscopy and spectroscopy results reveal
the interplay between the atomic structure of ring-shaped GaSb quantum dots in GaAs and …

An atomic scale study on the effect of Sb during capping of MBE grown III–V semiconductor QDs

M Bozkurt, JM Ulloa, PM Koenraad - Semiconductor science and …, 2011 - iopscience.iop.org
The use of Sb during the capping process of quantum dots (QDs) to tune the emission
wavelength has been investigated by means of cross-sectional scanning tunneling …