Towards magnonic devices based on voltage-controlled magnetic anisotropy
Despite significant technological advances in miniaturization and operational speed,
modern electronic devices suffer from unescapably increasing rates of Joule heating and …
modern electronic devices suffer from unescapably increasing rates of Joule heating and …
Recent progress in the voltage-controlled magnetic anisotropy effect and the challenges faced in developing voltage-torque MRAM
The electron spin degree of freedom can provide the functionality of “nonvolatility” in
electronic devices. For example, magnetoresistive random access memory (MRAM) is …
electronic devices. For example, magnetoresistive random access memory (MRAM) is …
Large voltage-induced changes in the perpendicular magnetic anisotropy of an MgO-based tunnel junction with an ultrathin Fe layer
T Nozaki, A Kozioł-Rachwał, W Skowroński, V Zayets… - Physical Review …, 2016 - APS
We study the voltage control of perpendicular magnetic anisotropy in an ultrathin Fe layer
sandwiched between the Cr buffer and MgO tunneling barrier layers. A high-interface …
sandwiched between the Cr buffer and MgO tunneling barrier layers. A high-interface …
Rashba spin-orbit anisotropy and the electric field control of magnetism
The control of the magnetism of ultra-thin ferromagnetic layers using an electric field, rather
than a current, has many potential technologically important applications. It is usually …
than a current, has many potential technologically important applications. It is usually …
Comparative evaluation of spin-transfer-torque and magnetoelectric random access memory
S Wang, H Lee, F Ebrahimi, PK Amiri… - IEEE Journal on …, 2016 - ieeexplore.ieee.org
Spin-transfer torque random access memory (STT-RAM), as a promising nonvolatile
memory technology, faces challenges of high write energy and low density. The recently …
memory technology, faces challenges of high write energy and low density. The recently …
First-principles study of the inversion thermodynamics and electronic structure of (thio)spinels (, Mn, Co, Ni; , S)
Fe M 2 X 4 spinels, with the magnetite structure, where M is a transition metal and X is
oxygen or sulfur, are candidate materials for spin filters, one of the key devices in …
oxygen or sulfur, are candidate materials for spin filters, one of the key devices in …
Voltage-controlled reconfigurable spin-wave nanochannels and logic devices
Propagating spin waves (SWs) promise to be a potential information carrier in future
spintronics devices with lower power consumption. Here, we propose reconfigurable …
spintronics devices with lower power consumption. Here, we propose reconfigurable …
Giant voltage modulation of magnetic anisotropy in strained heavy metal/magnet/insulator heterostructures
Ab initio electronic structure calculations reveal that epitaxial strain has a dramatic effect on
the voltage-controlled magnetic anisotropy (VCMA) in Ta/FeCo/MgO junctions. Strain can …
the voltage-controlled magnetic anisotropy (VCMA) in Ta/FeCo/MgO junctions. Strain can …
Underlayer material influence on electric-field controlled perpendicular magnetic anisotropy in CoFeB/MgO magnetic tunnel junctions
We study the dependence of the perpendicular magnetic anisotropy on the underlayer
material in magnetic tunnel junction. Using several different 4d and 5d metals we identify an …
material in magnetic tunnel junction. Using several different 4d and 5d metals we identify an …
Developments in voltage-controlled subnanosecond magnetization switching
T Yamamoto, R Matsumoto, T Nozaki… - Journal of Magnetism …, 2022 - Elsevier
We review the current status of research on magnetization switching that utilizes the voltage-
controlled magnetic anisotropy (VCMA) effect. In particular, we focus on the magnetization …
controlled magnetic anisotropy (VCMA) effect. In particular, we focus on the magnetization …