In Situ TEM Imaging of Defect Dynamics under Electrical Bias in Resistive Switching Rutile-TiO2
RJ Kamaladasa, AA Sharma, YT Lai… - Microscopy and …, 2015 - academic.oup.com
In this study, in situ electrical biasing was combined with transmission electron microscopy
(TEM) in order to study the formation and evolution of Wadsley defects and Magnéli phases …
(TEM) in order to study the formation and evolution of Wadsley defects and Magnéli phases …
Tuning the resistive switching properties of TiO2− x films
We study the electrical characteristics of TiO 2− x-based resistive switching devices
fabricated with different oxygen/argon flow ratio during the oxide thin film sputtering …
fabricated with different oxygen/argon flow ratio during the oxide thin film sputtering …
Studying ReRAM devices at low earth orbits using the LabOSat platform
Abstract LabOSat (acronym for “Laboratory On a Satellite”) is a type of electronic platform
designed to perform experiments in harsh, remote environments. Up to now, LabOSat …
designed to perform experiments in harsh, remote environments. Up to now, LabOSat …
Tailoring conductive filaments by electroforming polarity in memristive based TiO2 junctions
We probe the resistive switching response of Au/TiO 2/Cu junctions, on samples initialized
using both polarities electroforming. A conductive path is formed in both cases: a copper …
using both polarities electroforming. A conductive path is formed in both cases: a copper …
Manganite based memristors: Influence of the electroforming polarity on the electrical behavior and radiation hardness
We report on the fabrication and characterization of La 2/3 Ca 1/3 MnO 3 manganite-based
memristive devices. Polycrystalline manganite thin films were grown by Pulsed Laser …
memristive devices. Polycrystalline manganite thin films were grown by Pulsed Laser …
[HTML][HTML] Low temperature electroformation of TaOx-based resistive switching devices
Transport characteristics of TiN/Ta/TaO x/TiN resistive-switching crossbar devices with
amorphous TaO x functional layer have been investigated at cryogenic temperatures. Quasi …
amorphous TaO x functional layer have been investigated at cryogenic temperatures. Quasi …
Bipolar switching properties of neodymium oxide RRAM devices using by a low temperature improvement method
Bipolar resistive switching properties and endurance switching behavior of the neodymium
oxide (Nd2O3) thin films resistive random access memory (RRAM) devices for a high …
oxide (Nd2O3) thin films resistive random access memory (RRAM) devices for a high …
Resistive switching phenomena in TiOx nanoparticle layers for memory applications
Electrical characteristics of a Co/TiO x/Co resistive memory device, fabricated by two
different methods, are reported. In addition to crystalline TiO 2 layers fabricated via …
different methods, are reported. In addition to crystalline TiO 2 layers fabricated via …
EDRA, the Argentine facility to simulate radiation damage in space
ML Ibarra, JA Garcia, A Dato, E Yaccuzzi… - Radiation Physics and …, 2019 - Elsevier
EDRA (Ensayos de Daño por Radiación y Ambiente/Test of Radiation and Environmental
Damage) is a system composed of a beam line and a vacuum chamber installed at Tandar …
Damage) is a system composed of a beam line and a vacuum chamber installed at Tandar …
A study of nanoscale profiling modes of a silicon surface via local anodic oxidation
VV Polyakova, VA Smirnov, OA Ageev - Nanotechnologies in Russia, 2018 - Springer
The nanoscale profiling modes of an (100) n-type silicon substrate surface through the local
anodic oxidation (LAO) are studied. The influence of relative humidity and pulse voltage at …
anodic oxidation (LAO) are studied. The influence of relative humidity and pulse voltage at …