Shallow donor level associated with hydrogen impurities in undoped BaTiO3
TU Ito, W Higemoto, TD Matsuda, A Koda… - Applied Physics …, 2013 - pubs.aip.org
The influence of hydrogen impurities on the electronic properties of undoped BaTiO 3 was
studied from a microscopic point of view using the muon spin rotation and relaxation …
studied from a microscopic point of view using the muon spin rotation and relaxation …
Behavior of hydrogen in InN investigated in real time exploiting spectroscopic ellipsometry
The interaction of hydrogen with InN epitaxial films has been investigated by exposing InN to
a remote hydrogen plasma and monitoring changes in the InN optical properties in real time …
a remote hydrogen plasma and monitoring changes in the InN optical properties in real time …
Diffusion and trapping of Mu in the III–V nitrides
RL Lichti, YG Celebi, SP Cottrell… - Journal of Physics …, 2004 - iopscience.iop.org
Sites and dynamics obtained for muonium (Mu) defect centres provide a good experimental
model for the behaviour of the equivalent hydrogen impurities. We discuss the dynamic …
model for the behaviour of the equivalent hydrogen impurities. We discuss the dynamic …
Dynamics of positively charged muonium centers in indium nitride
YG Celebi, RL Lichti, BE Coss, SFJ Cox - Physical Review B—Condensed …, 2006 - APS
Muon spin depolarization measurements performed on powdered InN with zero applied
magnetic field reveal several positively charged diamagnetic muonium centers. At low …
magnetic field reveal several positively charged diamagnetic muonium centers. At low …
Diffusion of a light hydrogen isotope in the III-V nitrides
RL Lichti - Defect and Diffusion Forum, 2004 - Trans Tech Publ
Over the last few years investigation of muonium, a light pseudo-isotope of hydrogen formed
by implantation of positive muons, has provided significant information on isolated hydrogen …
by implantation of positive muons, has provided significant information on isolated hydrogen …
Low temperature epitaxial growth of III-Nitride semiconductors on silicon carbide templates by remote plasma metal-organic chemical vapor deposition
R Dubreuil - 2018 - knowledgecommons.lakeheadu.ca
Group III-Nitride (III-N) semiconductors are of high interest due to their thermal and electrical
properties. Opposed to other III-V group semiconductors III-N semiconductors are hexagonal …
properties. Opposed to other III-V group semiconductors III-N semiconductors are hexagonal …
Motion of Muonium (Hydrogen) in the III‐V Nitrides
RL Lichti, YG Celebi, SFJ Cox, EA Davis - AIP Conference …, 2005 - pubs.aip.org
Muon spin relaxation measurements in the III–V nitrides have provided data on the motion of
each of the three charge‐states of the muonium 'isotope'of hydrogen. Motional parameters …
each of the three charge‐states of the muonium 'isotope'of hydrogen. Motional parameters …