In-memory computing with emerging nonvolatile memory devices

C Cheng, PJ Tiw, Y Cai, X Yan, Y Yang… - Science China Information …, 2021 - Springer
The von Neumann bottleneck and memory wall have posed fundamental limitations in
latency and energy consumption of modern computers based on von Neumann architecture …

Functional oxides for photoneuromorphic engineering: toward a solar brain

A Pérez‐Tomás - Advanced Materials Interfaces, 2019 - Wiley Online Library
New device concepts and new computing principles are needed to balance our ever‐
growing appetite for data and information with the realization of the goals of increased …

NeuroMem: Analog graphene-based resistive memory for artificial neural networks

H Abunahla, Y Halawani, A Alazzam, B Mohammad - Scientific reports, 2020 - nature.com
Artificial Intelligence (AI) at the edge has become a hot subject of the recent technology-
minded publications. The challenges related to IoT nodes gave rise to research on efficient …

A liquid electrolyte-based memristor with application in associate learning

G Dou, J Liu, W Guo, L Liu, D Zhang, M Guo - Applied Physics Letters, 2023 - pubs.aip.org
Most of the existing memristors are complicated to prepare, which is not conducive to actual
applications. In this paper, a Zn/ZnSO 4/Pt (ZSP) memristor with a simple preparation …

Electrochemical and thermodynamic processes of metal nanoclusters enabled biorealistic synapses and leaky-integrate-and-fire neurons

J Li, Y Yang, M Yin, X Sun, L Li, R Huang - Materials Horizons, 2020 - pubs.rsc.org
Artificial synapses and neurons are recognized as key elements in building bioinspired,
neuromorphic computing systems. However, synaptic and neuronal elements that have …

Type-I core–shell ZnSe/ZnS quantum dot-based resistive switching for implementing algorithm

ZP Wang, Y Wang, J Yu, JQ Yang, Y Zhou, JY Mao… - Nano Letters, 2020 - ACS Publications
Core–shell semiconductor quantum dots (QDs) are one of the biggest nanotechnology
successes so far. In particular, type-I QDs with straddling band offset possess the ability to …

Ultralow‐Power Compact Artificial Synapse Based on a Ferroelectric Fin Field‐Effect Transistor for Spatiotemporal Information Processing

Z Zhang, G Zhan, W Gan, Y Cheng… - Advanced Intelligent …, 2023 - Wiley Online Library
Artificial synapses are key elements in building bioinspired, neuromorphic computing
systems. Ferroelectric field‐effect transistors (FeFETs) with excellent controllability and …

Advances in memristor based artificial neuron fabrication-materials, models, and applications

J Bian, Z Liu, Y Tao, Z Wang, X Zhao… - … Journal of Extreme …, 2023 - iopscience.iop.org
Spiking neural network (SNN), widely known as the third-generation neural network, has
been frequently investigated due to its excellent spatiotemporal information processing …

Flexible graphene-channel memory devices: A review

SM Sattari-Esfahlan, CH Kim - ACS Applied Nano Materials, 2021 - ACS Publications
There is an increasing importance of memory technologies in our ever-digitalizing society,
which is characterized by the generation and use of a tremendous amount of real-time data …

Spiking dynamics and synchronization properties of optical neurons based on VCSEL-SAs

Y Han, S Xiang, Z Song, A Wen, Y Hao - Nonlinear Dynamics, 2021 - Springer
We systematically investigate the spiking dynamics of optical neurons consisting of vertical-
cavity surface emitting laser with an embedding saturable absorber (VCESL-SA) and the …