There is currently much activity toward the integration of mid-infrared semiconductor lasers
on Si substrates for developing a variety of smart, compact, sensors based on Si-photonics …

With continuously growing global data traffic, silicon (Si)-based photonic integrated circuits
have emerged as a promising solution for high-performance Intra-/Inter-chip optical …

Epitaxially grown quantum dot (QD) lasers are emerging as an economical approach to
obtain on-chip light sources. Thanks to the three-dimensional confinement of carriers, QDs …

Progress in computing architectures is approaching a paradigm shift: traditional computing
based on digital complementary metal-oxide semiconductor technology is nearing physical …

Direct epitaxial growth of group III-V light sources with excellently thermal performance on
silicon photonics chips promises low-cost, low-power-consumption, high-performance …

The realization of high-performance Si-based III-V quantum-dot (QD) lasers has long
attracted extensive interest in optoelectronic circuits. This manuscript presents InAs/GaAs …

InAs/GaAs quantum dot (QD) laser monolithically grown on silicon is one of the potential
approaches to realizing silicon-based light sources. However, the mismatch between GaAs …

A self-assembled quantum dot (QD) gain medium has multiple favorable material properties
over conventional quantum well (QW) structures and bulk materials, including a large …

Room-temperature continuous-wave operation of InGaAs/AlGaAs quantum well lasers
directly grown on on-axis silicon (001) has been demonstrated. A 420 nm thick GaAs …

The enhancement of the reliability of the silicon-based III–V quantum well lasers, especially
of those on an on-axis Si (001) substrate, is of great importance now a days for the …