A semiconductor memory device includes a semiconductor substrate having active areas
and a trench isolation region between the active areas. The active areas extend along a first …

An integrated circuit device includes a substrate having a first region and a second region
separated from each other along a direction parallel to an upper surface of the substrate. An …

A ferroelectric memory device according to one embodiment includes a semiconductor
substrate, a channel layer disposed on the semiconductor substrate, a ferroelectric layer …

(57) ABSTRACT A semiconductor memory device includes a semiconductor substrate
having active areas and a trench isolation region between the active areas. The active areas …

Junction) device can be customized in shape by sequentially forming its successive layers
over a symmetrically curved electrode. By initially shaping the electrode to have a concave …

Methods of fabricating a memory device are provided. The methods may include forming a
mask pattern including line-shaped portions that are parallel to each other and extend on a …

A semiconductor memory device includes a semiconductor substrate having active areas
and a trench isolation region between the active areas. The active areas extend along a first …

A method of manufacturing a semiconductor memory device and a semiconductor memory
device, the method including providing a substrate that includes a cell array region and a …

A ferroelectric memory device includes a semiconductor substrate, a fin structure disposed
on the semiconductor substrate and having a trench, the trench having a bottom surface and …

A system for wirelessly charging, via a medium, a device having a receiver coil comprises at
least one relay configured to inductively transfer power to the receiver coil of the device and …