Multiferroic heterostructures integrating ferroelectric and magnetic materials

JM Hu, LQ Chen, CW Nan - Advanced materials, 2016 - Wiley Online Library
Multiferroic heterostructures can be synthesized by integrating monolithic ferroelectric and
magnetic materials, with interfacial coupling between electric polarization and …

Multifunctional magnetoelectric materials for device applications

N Ortega, A Kumar, JF Scott… - Journal of Physics …, 2015 - iopscience.iop.org
Over the past decade magnetoelectric (ME) mutiferroic (MF) materials and their devices are
one of the highest priority research topics that has been investigated by the scientific ferroics …

Roadmap on magnetoelectric materials and devices

X Liang, A Matyushov, P Hayes, V Schell… - IEEE Transactions …, 2021 - ieeexplore.ieee.org
The possibility of tuning the magnetic properties of materials with voltage (converse
magnetoelectricity) or generating electric voltage with magnetic fields (direct …

Electric-field-induced spin wave generation using multiferroic magnetoelectric cells

S Cherepov, P Khalili Amiri, JG Alzate, K Wong… - Applied Physics …, 2014 - pubs.aip.org
In this work, we report on the demonstration of voltage-driven spin wave excitation, where
spin waves are generated by multiferroic magnetoelectric (ME) cell transducers driven by an …

Electric-field control of magnetism via strain transfer across ferromagnetic/ferroelectric interfaces

T Taniyama - Journal of Physics: Condensed Matter, 2015 - iopscience.iop.org
By taking advantage of the coupling between magnetism and ferroelectricity, ferromagnetic
(FM)/ferroelectric (FE) multiferroic interfaces play a pivotal role in manipulating magnetism …

Full 180 magnetization reversal with electric fields

JJ Wang, JM Hu, J Ma, JX Zhang, LQ Chen, CW Nan - Scientific reports, 2014 - nature.com
Achieving 180° magnetization reversal with an electric field rather than a current or magnetic
field is a fundamental challenge and represents a technological breakthrough towards new …

Bipolar loop-like non-volatile strain in the (001)-oriented Pb(Mg1/3Nb2/3)O3-PbTiO3 single crystals

L Yang, Y Zhao, S Zhang, P Li, Y Gao, Y Yang… - Scientific Reports, 2014 - nature.com
Strain has been widely used to manipulate the properties of various kinds of materials, such
as ferroelectrics, semiconductors, superconductors, magnetic materials and “strain …

Recent development of E-field control of interfacial magnetism in multiferroic heterostructures

Y Cheng, S Zhao, Z Zhou, M Liu - Nano Research, 2023 - Springer
The full E-field control of multiferroic interfacial magnetism is a long-standing challenge for
micro-electromechanical systems (MEMS) and has the potential to transform electronics …

Electric-field switching of perpendicularly magnetized multilayers

Y Shirahata, R Shiina, DL González, KJA Franke… - NPG Asia …, 2015 - nature.com
Perpendicularly magnetized layers are used widely for high-density information storage in
magnetic hard disk drives and nonvolatile magnetic random access memories. Writing and …

Acoustically assisted spin-transfer-torque switching of nanomagnets: An energy-efficient hybrid writing scheme for non-volatile memory

AK Biswas, S Bandyopadhyay, J Atulasimha - Applied Physics Letters, 2013 - pubs.aip.org
We show that the energy dissipated to write bits in spin-transfer-torque random access
memory can be reduced by an order of magnitude if a surface acoustic wave (SAW) is …