A vertical-cavity surface emitting laser (VCSEL) was invented 30 years ago. A lot of unique
features can be expected, such as low-power consumption, wafer-level testing, small …

The present paper reviews recent achievements in the fabrication of diode lasers for the
near-infrared range on GaAs substrates. 1.3 µm light emitters are currently widely used in …

The surface-emitting laser (SEL) is considered one of the most important devices for optical
interconnects and LANs, enabling ultra parallel information transmission in lightwave and …

The vertical-cavity surface-emitting laser (VCSEL) is becoming a key device in high-speed
optical local-area networks (LANs) and even wide-area networks (WANs). This device is …

In this paper we present a successful growth of highly strained GaInAs/GaAs quantum wells
by low-pressure organometallic vapor-phase epitaxy using tertiarybutylarsine. The transition …

This letter reports studies on highly strained and strain-compensated InGaAs quantum-well
(QW) active diode lasers on GaAs substrates, fabricated by low-temperature (550/spl deg/C) …

The electronic band structure and material gain have been calculated for GaAsBi/GaAs
quantum wells (QWs) with various bismuth concentrations (Bi≤ 15%) within the 8-band and …

Strained-layer quantum wells have revolutionized the performance of near-infrared diode
lasers. Two primary factors leading to the prevalence of such materials are; 1) the ability for …

Characteristic temperature coefficients of the threshold current (T/sub 0/) and the external
differential quantum efficiency (T/sub 1/) are studied as simple functions of the temperature …

We have realized high-quality GaInAs-GaAs quantum wells (QWs) with high strain of over
2% on GaAs (311) B substrate for a polarization controlled vertical-cavity surface-emitting …