Two‐dimensional dielectric nanosheets: novel nanoelectronics from nanocrystal building blocks
Abstract Two‐dimensional (2D) nanosheets, which possess atomic or molecular thickness
and infinite planar lengths, are regarded as the thinnest functional nanomaterials. The …
and infinite planar lengths, are regarded as the thinnest functional nanomaterials. The …
The properties of ferroelectric films at small dimensions
TM Shaw, S Trolier-McKinstry… - Annual Review of …, 2000 - annualreviews.org
▪ Abstract This paper reviews the literature on size effects in ferroelectric materials, with an
emphasis on thin film perovskite ferroelectrics. The roles of boundary conditions, defect …
emphasis on thin film perovskite ferroelectrics. The roles of boundary conditions, defect …
High dielectric constant TiO2 thin films on a Ru electrode grown at 250 C by atomic-layer deposition
TiO2 thin films with high dielectric constants (83–100) were grown on a Ru electrode at a
growth temperature of 250 C using the atomic-layer deposition method. The as-deposited …
growth temperature of 250 C using the atomic-layer deposition method. The as-deposited …
Al‐Doped TiO2 Films with Ultralow Leakage Currents for Next Generation DRAM Capacitors
Dynamic random access memory (DRAM) is used as the main memory of every modern
computer, due to its high density, high speed and efficient memory function. Each DRAM cell …
computer, due to its high density, high speed and efficient memory function. Each DRAM cell …
High-k dielectrics for future generation memory devices
JA Kittl, K Opsomer, M Popovici, N Menou… - Microelectronic …, 2009 - Elsevier
The requirements and development of high-k dielectric films for application in storage cells
of future generation flash and Dynamic Random Access Memory (DRAM) devices are …
of future generation flash and Dynamic Random Access Memory (DRAM) devices are …
Capacitors with an equivalent oxide thickness of< 0.5 nm for nanoscale electronic semiconductor memory
The recent progress in the metal‐insulator‐metal (MIM) capacitor technology is reviewed in
terms of the materials and processes mostly for dynamic random access memory (DRAM) …
terms of the materials and processes mostly for dynamic random access memory (DRAM) …
Progress in the developments of (Ba, Sr) TiO3 (BST) thin films for Gigabit era DRAMs
S Ezhilvalavan, TY Tseng - Materials Chemistry and Physics, 2000 - Elsevier
This paper reviews the recent developments of (Ba, Sr) TiO3 (BST) thin films for future Gbit
era dynamic random access memory (DRAM) applications. The trends of DRAM capacitors …
era dynamic random access memory (DRAM) applications. The trends of DRAM capacitors …
High-dielectric constant thin films for dynamic random access memories (DRAM)
JF Scott - Annual review of materials science, 1998 - annualreviews.org
▪ Abstract We discuss high-dielectric films, in general, oxide ferroelectrics based on simple
perovskite structures and related Aurivillius-phase layered structure perovskites employed …
perovskite structures and related Aurivillius-phase layered structure perovskites employed …
The rise of 2D dielectrics/ferroelectrics
Ultrathin films with high-k dielectric/ferroelectric properties form the basis of modern
electronics. With further miniaturization of electronic devices, conventional materials are …
electronics. With further miniaturization of electronic devices, conventional materials are …