GaN on Si technologies for power switching devices
M Ishida, T Ueda, T Tanaka… - IEEE Transactions on …, 2013 - ieeexplore.ieee.org
This paper reviews the recent activities for normally-off GaN-based gate injection transistors
(GITs) on Si substrates and their application to inverters. Epitaxial growth of the AlGaN/GaN …
(GITs) on Si substrates and their application to inverters. Epitaxial growth of the AlGaN/GaN …
Method of constructing a semiconductor device and structure
Z Or-Bach, DC Sekar, B Cronquist, I Beinglass… - US Patent …, 2012 - Google Patents
2011-12-06 Assigned to MONOLITHIC 3D INC. reassignment MONOLITHIC 3D INC.
ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors …
ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors …
[图书][B] Gallium nitride and silicon carbide power devices
BJ Baliga - 2016 - books.google.com
During the last 30 years, significant progress has been made to improve our understanding
of gallium nitride and silicon carbide device structures, resulting in experimental …
of gallium nitride and silicon carbide device structures, resulting in experimental …
Multilevel semiconductor device and structure with memory
Z Or-Bach, JW Han - US Patent 10,515,981, 2019 - Google Patents
US10515981B2 - Multilevel semiconductor device and structure with memory - Google
Patents US10515981B2 - Multilevel semiconductor device and structure with memory …
Patents US10515981B2 - Multilevel semiconductor device and structure with memory …
Method of forming three dimensional integrated circuit devices using layer transfer technique
Z Or-Bach, D Sekar, B Cronquist, Z Wurman - US Patent 8,642,416, 2014 - Google Patents
US8642416B2 - Method of forming three dimensional integrated circuit devices using layer
transfer technique - Google Patents US8642416B2 - Method of forming three dimensional …
transfer technique - Google Patents US8642416B2 - Method of forming three dimensional …
Semiconductor device and structure
Z Or-Bach, B Cronquist, I Beinglass, JL De Jong… - US Patent …, 2013 - Google Patents
US8362482B2 - Semiconductor device and structure - Google Patents US8362482B2 -
Semiconductor device and structure - Google Patents Semiconductor device and structure Info …
Semiconductor device and structure - Google Patents Semiconductor device and structure Info …
Record Breakdown Voltage (2200 V) of GaN DHFETs on Si With 2- Buffer Thickness by Local Substrate Removal
P Srivastava, J Das, D Visalli… - IEEE Electron …, 2010 - ieeexplore.ieee.org
In this letter, we present a local substrate removal technology (under the source-to-drain
region), reminiscent of through-silicon vias and report on the highest ever achieved …
region), reminiscent of through-silicon vias and report on the highest ever achieved …
Semiconductor device and structure
Z Or-Bach, B Cronquist, I Beinglass, JL De Jong… - US Patent …, 2013 - Google Patents
2011-03-25 Assigned to MONOLITHIC 3D INC. reassignment MONOLITHIC 3D INC.
ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors …
ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors …
Method for fabrication of a semiconductor device and structure
Z Or-Bach, DC Sekar, B Cronquist - US Patent 8,557,632, 2013 - Google Patents
US8557632B1 - Method for fabrication of a semiconductor device and structure - Google
Patents US8557632B1 - Method for fabrication of a semiconductor device and structure …
Patents US8557632B1 - Method for fabrication of a semiconductor device and structure …
Semiconductor device and structure
Z Or-Bach, B Cronquist, I Beinglass, JL De Jong… - US Patent …, 2013 - Google Patents
2010-12-03 Assigned to NuPGA Corporation reassignment NuPGA Corporation
ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors …
ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors …