Defects in zno

MD McCluskey, SJ Jokela - Journal of Applied Physics, 2009 - pubs.aip.org
Zinc oxide (ZnO) is a wide band gap semiconductor with potential applications in
optoelectronics, transparent electronics, and spintronics. The high efficiency of UV emission …

Properties of Donor Qubits in Formed by Indium-Ion Implantation

X Wang, C Zimmermann, M Titze, V Niaouris… - Physical Review …, 2023 - APS
Neutral shallow donors (D 0) in Zn O have emerged as a promising candidate for solid-state
spin qubits. Here we report on the formation of D 0 in Zn O via implantation of In and …

Identification of substitutional Li in -type ZnO and its role as an acceptor

KM Johansen, A Zubiaga, I Makkonen, F Tuomisto… - Physical Review B …, 2011 - APS
Monocrystalline n-type zinc oxide (ZnO) samples prepared by different techniques and
containing various amounts of lithium (Li) have been studied by positron annihilation …

Aluminum migration and intrinsic defect interaction in single-crystal zinc oxide

KM Johansen, L Vines, TS Bjørheim, R Schifano… - Physical Review …, 2015 - APS
Vacancy-mediated migration of Al in single-crystal zinc oxide (ZnO) is investigated using
secondary-ion mass spectrometry (SIMS) combined with hybrid density-functional theory …

Preparation and photoluminescence behavior of Mn-doped nano-ZnO

B Wu, J Li, Q Li - Optik, 2019 - Elsevier
Abstract The Mn-doped nano-ZnO powder was successfully synthesized via co-precipitation
and vacuum annealing and the scanning electron microscopy (SEM), X-ray diffracton (XRD) …

Evolution of deep electronic states in ZnO during heat treatment in oxygen-and zinc-rich ambients

V Quemener, L Vines, EV Monakhov… - Applied Physics …, 2012 - pubs.aip.org
Hydrothermally grown ZnO samples have been annealed in Ar, Zn-rich, and O-rich ambients
and investigated by deep level transient spectroscopy (DLTS). The DLTS measurements …

Li and group-III impurity doping in : Potential and limitations

VS Olsen, YK Frodason, YK Hommedal… - Physical Review …, 2022 - APS
II–IV nitrides and their alloys represent an earth-abundant and potentially cost-efficient
alternative to the well-developed AlN-GaN-InN system. A major drawback with the II–IV …

H and Li related defects in ZnO and their effect on electrical properties

TS Bjørheim, S Erdal, KM Johansen… - The Journal of …, 2012 - ACS Publications
Li and H are important electrically active impurities in ZnO and this work presents a detailed
experimental and computational study of the behavior of H and Li in ZnO and their effect on …

Thermal process dependence of Li configuration and electrical properties of Li-doped ZnO

Z Zhang, KE Knutsen, T Merz, AY Kuznetsov… - Applied Physics …, 2012 - pubs.aip.org
We used depth-resolved cathodoluminescence spectroscopy (DRCLS) to describe the
strong dependence of Li acceptor formation on thermal treatment in Li-doped ZnO. Within a …

Nanostructured metal oxide-based electrode materials for ultracapacitors

CA Okaro, OS Okwundu, PC Tagbo… - … Metal Oxide Thin Films …, 2021 - Springer
The field of electrochemical energy conversion and storage has found favor in the sight of
certain metal oxides (MOx) that are capable of varying their oxidation states. Some of such …