Compact and wideband nanoacoustic pass-band filters for future 5G and 6G cellular radios
Over recent years, the surge in mobile communication has deepened global connectivity.
With escalating demands for faster data rates, the push for higher carrier frequencies …
With escalating demands for faster data rates, the push for higher carrier frequencies …
6-20 GHz 30% ScAlN Lateral Field-Excited Cross-sectional Lame'Mode Resonators for future mobile RF Front-Ends
This article reports on 30% scandium-doped AlN (ScAlN) lateral field-excited (LFE) cross-
sectional Lame'mode resonators (CLMRs) with unprecedented performance in the 6–20 …
sectional Lame'mode resonators (CLMRs) with unprecedented performance in the 6–20 …
High quality co-sputtering alscn thin films for piezoelectric lamb-wave resonators
Doped AlN thin films, especially high Sc-ratio AlScN film, have been reported to significantly
improve the piezoelectric properties and draw attention for high performance resonators …
improve the piezoelectric properties and draw attention for high performance resonators …
Spurious-Free S₁ Mode AlN/ScAlN-Based Lamb Wave Resonator With Trapezoidal Electrodes
Spurious modes (SMs) suppression and electromechanical coupling coefficient ()
improvement in Lamb wave resonators (LWRs) have always been the research hotspot. In …
improvement in Lamb wave resonators (LWRs) have always been the research hotspot. In …
High-Crystallinity 30% Scaln Enabling High Figure of Merit X-Band Microacoustic Resonators for Mid-Band 6G
This paper presents an experimental comparison of high-performance X-band piezoelectric
30% Sc-doped Aluminum Nitride (ScAlN) Cross-sectional Lamé Mode resonators (CLMRs) …
30% Sc-doped Aluminum Nitride (ScAlN) Cross-sectional Lamé Mode resonators (CLMRs) …
[HTML][HTML] High-fidelity patterning of AlN and ScAlN thin films with wet chemical etching
We report on the anisotropic wet etching of sputtered AlN and Sc 0.2 Al 0.8 N thin films. With
tetramethyl ammonium hydroxide at 80° C, the etch rates along the c-axis were 330 and 30 …
tetramethyl ammonium hydroxide at 80° C, the etch rates along the c-axis were 330 and 30 …
Vertical and Lateral Etch Survey of Ferroelectric AlN/Al1−xScxN in Aqueous KOH Solutions
Z Tang, G Esteves, J Zheng, RH Olsson III - Micromachines, 2022 - mdpi.com
Due to their favorable electromechanical properties, such as high sound velocity, low
dielectric permittivity and high electromechanical coupling, Aluminum Nitride (AlN) and …
dielectric permittivity and high electromechanical coupling, Aluminum Nitride (AlN) and …
Structural characterization of the abnormal grains evolution in sputtered ScAlN films
The mis-oriented abnormal grains embedded in the sputtered scandium aluminum nitride
(ScAlN) film degrade the film piezoelectric response. In this paper, we present for the first …
(ScAlN) film degrade the film piezoelectric response. In this paper, we present for the first …
Robust Scandium Aluminum Nitride MEMS Resonators for L Band Operation in Orbital Environments
IW Dunk - 2021 - scholar.afit.edu
This thesis investigates AlN alloyed with scandium in a variety of resonator architectures
including WEM, overtone WEM, LEM, and SAW that have the potential to achieve high levels …
including WEM, overtone WEM, LEM, and SAW that have the potential to achieve high levels …
Machine Learning Assisted AlN Resonator Optimization Achieving 7.8% Coupling Coefficient with 70% Reduction in Time Expenditure
X He, C Ma, F Huang, L Liao, J Chen… - 2024 IEEE …, 2024 - ieeexplore.ieee.org
In our work, we present a machine learning-assisted optimization method that can generate
the optimal design parameters for the laterally coupled alternating thickness (LCAT) mode …
the optimal design parameters for the laterally coupled alternating thickness (LCAT) mode …